Boron Barrier Layer in 3D Memory Stacks to Block Halogen Diffusion
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Solution Overview
Problem
Microelectronic device designers face challenges in forming complex 3D structures like 3D NAND devices due to defects during and after formation, which are prone to issues such as void formation and halogen species diffusion, affecting device performance and longevity.
Innovation Solution
Incorporation of a boron-containing material between the stack structure and the liner material in the microelectronic device, which reacts with residues to prevent halogen species diffusion and reduce void formation, enhancing device performance and longevity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If 3D microelectronic devices are formed to increase integration density, then the number of switching devices per unit area increases, but the devices become prone to defects such as void formation and halogen species diffusion
Solution Approach 1:
A boron-containing material is introduced as an intermediary layer between the liner material and the stack structure. This intermediate layer acts as a diffusion barrier to prevent halogen species from migrating from the liner material into the stack structure, thereby reducing void formation and improving device reliability while maintaining the 3D integrated architecture
Solution Approach 2:
The patent employs a composite material system consisting of multiple layers including the liner material, the boron-containing material, and the stack structure. This composite structure combines materials with complementary properties: the liner material provides structural support, while the boron-containing material provides diffusion barrier functionality, together solving the reliability issue in high-density 3D devices
2Area of moving object
If feature dimensions and spacing are reduced to increase density, then more devices fit in a unit area, but manufacturing complexity and defect formation increase
Solution Approach 1:
The boron-containing material is deposited in advance during the fabrication process, before the formation of subsequent critical structures. This preliminary action ensures that the diffusion barrier is already in place to prevent halogen species migration that would otherwise occur during later high-temperature processing steps, thereby simplifying manufacturing by preventing defects before they form
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The boron-containing material effectively prevents halogen species diffusion and reduces void formation, improving the performance and longevity of microelectronic devices by stabilizing the liner material.
Implementation Method 1
The boron-containing material is between the liner material and the stack structure... prevents diffusion of a halogen (e.g., fluorine, chlorine, bromine, iodine, or a combination thereof) species from the liner material
Data Source
AI summary
A microelectronic device comprises a stack structure, a contact structure, a liner material, and a boron-containing material. The stack structure comprises alternating conductive structures and dielectric structures. The contact structure extends through the stack structure. The liner material is between the stack structure and the contact structure. The boron-containing material is between the liner material and the stack structure. Related electronic systems and methods are also described.