Water Vapor Plasma Cleaning for Boron-Carbon Residuals
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Solution Overview
Problem
Conventional cleaning methods for processing chambers with high-temperature boron-carbon hardmask layers react with aluminum components, leading to contamination and process drift, as fluorine or chlorine-containing gases etch aluminum components, forming harmful compounds that redeposit and contaminate the chamber.
Innovation Solution
A method involving a plasma process with water vapor and specific carrier gases, including a first plasma process with a showerhead bias and a second plasma process with a side electrode bias, effectively removes boron-carbon layers from chamber components without reacting with aluminum, using a water vapor plasma to oxidize and etch the boron-carbon layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If fluorine-rich or chlorine-rich gases are used for chamber cleaning, then boron-carbon layers are removed effectively, but aluminum components are etched and contamination is generated
Solution Approach 1:
The patent changes the chemical composition parameters of the cleaning gas from fluorine-rich or chlorine-rich gases to oxygen-rich plasma. This parameter change allows effective removal of boron-carbon layers through oxidation while avoiding the etching of aluminum components that occurs with conventional cleaning gases.
Solution Approach 2:
The patent employs oxygen-rich plasma as a strong oxidizing environment to remove boron-carbon deposition residuals. The oxygen plasma oxidizes the boron-carbon layers, converting them to volatile compounds that can be evacuated, achieving effective cleaning without damaging aluminum chamber components.
2Productivity
If high temperature (T>400°C) is used during cleaning, then boron-carbon layers are more easily removed, but aluminum fluoride formation and redeposition increase
Solution Approach 1:
The patent changes the chemical environment parameter from fluorine-rich to oxygen-rich plasma. This prevents the formation of aluminum fluoride even at elevated temperatures, eliminating the redeposition problem while maintaining effective boron-carbon layer removal through oxidation.
Solution Approach 2:
The patent converts the high temperature condition, which normally causes aluminum fluoride formation and redeposition, into a beneficial state by using oxygen-rich plasma. The high temperature enhances the oxidation of boron-carbon layers while the oxygen environment prevents harmful aluminum fluoride formation, turning a previously harmful condition into a useful one.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method selectively removes boron-carbon layers from chamber components, preventing contamination and maintaining chamber cleanliness, while avoiding the formation of harmful compounds that can redeposit and affect subsequent processes.
Implementation Method 1
The first plasma process comprises positioning a pedestal at a first distance from the showerhead and generating a plasma that comprises water vapor and a first carrier gas by biasing a showerhead
Implementation Method 2
using a water vapor plasma to oxidize and etch the boron-carbon layers
Data Source
AI summary
Embodiments of the invention generally relate to methods for removing a boron-carbon layer from a surface of a processing chamber using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a processing chamber includes positioning the pedestal at a first distance from the showerhead, and exposing a deposited boron-carbon layer to a first plasma process where the first plasma process comprises generating a plasma that comprises water vapor and a first carrier gas by biasing a showerhead that is disposed over a pedestal, and positioning the pedestal at a second distance from the showerhead and exposing the deposited boron-carbon layer to a second plasma process where the second plasma process comprises generating a plasma that comprises water vapor and a second carrier gas by biasing the showerhead and biasing a side electrode relative to the showerhead.


