Reaction Chamber Cleaning via Boron Detection Endpoint
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Solution Overview
Problem
In semiconductor device manufacturing, the deposition of films on reaction chamber walls leads to nonuniformity and contamination due to inaccurate endpoint determination in dry etching processes, resulting in decreased productivity and increased component replacement.
Innovation Solution
A semiconductor device manufacturing method involving the deposition of a precoat film containing a detection element on the reaction chamber walls, allowing for precise endpoint determination during dry etching by detecting the element in exhaust gases, thereby ensuring complete removal of the deposition film without damaging the chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dry etching is performed to remove deposition film from reaction chamber inner wall, then contamination is reduced, but endpoint determination is inaccurate leading to underetching or overetching
Solution Approach 1:
A precoat film containing a detection element is deposited on the reaction chamber inner wall as an intermediary layer. This precoat film serves as a mediator that enables accurate endpoint detection during dry etching, allowing the process to be terminated at the precise moment when the precoat film is completely removed, thereby preventing both underetching and overetching of the deposition film.
Solution Approach 2:
The system implements feedback by continuously monitoring the exhaust gas during dry etching to detect the detection element from the precoat film. When the detection element is detected in the exhaust gas, it provides feedback that the precoat film has been completely removed, signaling the endpoint of the etching process and enabling automatic termination.
2Ease of manufacture
If empirical etching time is used for dry etching, then process simplicity is maintained, but productivity decreases due to deposition film remaining or reaction chamber damage
Solution Approach 1:
The feedback mechanism through detection element monitoring automatically determines the endpoint of dry etching, eliminating the need for empirical time-based control. This ensures complete removal of deposition film without damaging the reaction chamber, thereby preventing yield loss and maintaining high productivity while keeping the process simple to implement.
Solution Approach 2:
The precoat film is deposited in advance on the reaction chamber inner wall before the actual deposition film formation. This preliminary action creates a detectable layer that enables precise endpoint control during subsequent dry etching, ensuring complete cleaning without chamber damage and maintaining high productivity.
3Measurement precision
If precoat film with detection element is deposited and detection is performed, then endpoint determination accuracy is improved, but device complexity increases
Solution Approach 1:
The precoat film with detection element acts as an intermediary that enables accurate endpoint detection using existing monitoring capabilities. This approach achieves high measurement precision without requiring fundamentally new detection equipment, thereby limiting the increase in device complexity.
Solution Approach 2:
The detection element in the precoat film can be detected using the same exhaust gas monitoring system already present in the film formation apparatus. This multi-functional use of existing equipment achieves accurate endpoint determination without adding separate complex detection systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method accurately determines the endpoint of dry etching, preventing contamination and damage to the reaction chamber, thus enhancing the productivity and yield of semiconductor devices by ensuring uniform film thickness and quality.
Implementation Method 1
a detection device for detecting the detection element in a gas exhausted from the reaction chamber
Implementation Method 2
depositing a precoat film on an inner wall of the reaction chamber, the precoat film containing a detection element
Implementation Method 3
dry etching is performed inside the reaction chamber to remove the deposition film deposited on the inner wall of the reaction chamber
Implementation Method 4
a halogen-based cleaning gas, such as HF gas and F2 gas, is used
Data Source
AI summary
In a manufacturing process of a semiconductor device by forming a structure film on a substrate in a reaction chamber of a manufacturing apparatus, cleaning inside the reaction chamber is performed. That is, a precoat film made of a silicon nitride film containing boron is deposited on an inner wall of the reaction chamber, a silicon nitride film not containing boron is formed as the structure film on the substrate in the reaction chamber, and the inner wall of the reaction chamber is dry etched to be cleaned. At this time, the dry etching is terminated after boron is detected in a gas exhausted from the reaction chamber.