Boron Diffusing Agent for Uniform Semiconductor Substrate Coating
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Solution Overview
Problem
Existing methods for diffusing impurity components into semiconductor substrates with three-dimensional structures on a nanometer scale face challenges such as non-uniformity, defect formation, and tarnishing, particularly when using ion implantation and coating-type diffusing agent compositions, which affect the performance of devices like CMOS image sensors and logic LSI devices.
Innovation Solution
A diffusing agent composition containing a combination of specific boron compounds, including boron hydrides and other boron compounds that can generate compounds with B—OH groups, is applied to form a uniform coating film, allowing for satisfactory and uniform diffusion of boron into semiconductor substrates at low temperatures, thereby overcoming the limitations of existing methods.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion implantation method is used to diffuse impurity into semiconductor substrate, then diffusion can be achieved, but point defects and point defect clusters are easily formed near the surface
Solution Approach 1:
The patent replaces the mechanical ion implantation process with a chemical diffusion process using a coating-type diffusing agent composition. Instead of physically implanting ions that cause defects, the invention uses a boron compound coating that releases boron atoms through thermal diffusion, thereby achieving uniform impurity distribution without creating point defects or defect clusters in the semiconductor substrate surface.
Solution Approach 2:
The patent changes the diffusion parameters by using a coating-type diffusing agent composition containing specific boron compounds. The composition includes boron compounds with different volatility and diffusion characteristics, allowing controlled release of boron atoms at lower temperatures. This parameter change enables uniform diffusion without the high-energy impact that causes defects in ion implantation.
2Manufacturing precision
If ion implantation method is used on three-dimensional structures, then impurity diffusion can be achieved, but uniform implantation into side surfaces and inner surfaces is difficult
Solution Approach 1:
The patent replaces the directional mechanical ion implantation process with a conformal coating process. The coating-type diffusing agent composition is applied as a thin film that uniformly covers all surfaces including side walls and inner surfaces of three-dimensional structures. The coating process naturally conforms to complex geometries, ensuring uniform boron distribution throughout the three-dimensional structure without the line-of-sight limitations of ion implantation.
3Manufacturing precision
If ion implantation is used to achieve uniform diffusion, then uniformity can be achieved, but crystal damage occurs leading to device failures
Solution Approach 1:
The patent replaces the high-energy mechanical ion implantation process with a low-energy chemical diffusion process. The coating-type diffusing agent composition releases boron atoms through thermal energy rather than high-energy ion impact. This substitution achieves uniform impurity diffusion while preventing crystal lattice damage that would otherwise lead to device failures, variations in device properties, and increased standby leak current.
Solution Approach 2:
The patent changes the energy parameters of the diffusion process by using thermal diffusion from a coating rather than high-energy ion implantation. The boron compounds in the coating release boron atoms at lower temperatures through thermal energy, maintaining uniform diffusion profiles while avoiding the crystal damage associated with high-energy ion bombardment. This parameter change preserves device reliability and performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables the formation of a uniform coating film without tarnishing, ensuring uniform impurity diffusion into semiconductor substrates with three-dimensional structures, even at temperatures below 1000°C, thereby enhancing the performance and reliability of semiconductor devices.
Implementation Method 1
a first boron compound (A1) and a second boron compound (A2), the first boron compound (A1) is a boron hydride or a boron compound which can generate, by hydrolysis, one or more types of compounds selected from a group consisting of compounds represented by a formula (a1e) and a formula (a1f)
Implementation Method 2
allowing for satisfactory and uniform diffusion of boron into semiconductor substrates at low temperatures, thereby overcoming the limitations of existing methods
Data Source
AI summary
A diffusing agent composition and a method of manufacturing a semiconductor substrate using the diffusing agent composition. The diffusing agent composition contains an impurity diffusion component (A) including a first type of boron-containing compound and a second type of boron-containing compound.