Boron-Gradient Magnetic Tunnel Junction for High TMR
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Solution Overview
Problem
Magnetic memory devices face challenges in achieving high tunnel magnetic resistance for efficient data storage and processing, particularly in meeting the demands for faster and lower power consumption in electronic devices.
Innovation Solution
The magnetic memory devices incorporate a magnetic tunnel junction structure with specific layer configurations, including a free layer and a pinned layer, where at least one of the layers includes boron (B) with varying content and thickness, and a non-magnetic metal layer, to optimize the tunnel magnetic resistance by adjusting the magnetization directions and layer thicknesses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a magnetic tunnel junction structure is used to achieve fast and nonvolatile characteristics, then speed and power consumption are improved, but tunnel magnetic resistance is insufficient
Solution Approach 1:
The patent applies local quality by creating distinct regions within the magnetic layers with different boron concentrations. The first magnetic layer has a first boron concentration while the second magnetic layer has a second boron concentration, allowing each region to contribute differently to the overall TMR ratio. This localized variation in material composition optimizes both the speed and TMR characteristics of the MTJ device.
Solution Approach 2:
The patent employs composite materials by combining multiple magnetic layers with different compositions and properties. The structure includes a first magnetic layer and a second magnetic layer, each with specific boron concentrations and thicknesses, creating a composite magnetic structure that achieves high TMR ratio while maintaining fast switching characteristics.
2Stability of the object's composition
If the thickness of magnetic layers is increased to improve stability, then magnetization stability is improved, but tunnel magnetic resistance decreases
Solution Approach 1:
The patent applies parameter changes by precisely controlling the thickness and boron concentration of each magnetic layer. The first magnetic layer has a first thickness and the second magnetic layer has a second thickness, with specific boron concentrations in each layer. By optimizing these parameters, the patent achieves both magnetization stability and high TMR ratio simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the tunnel magnetic resistance, enabling improved data storage and processing efficiency while meeting the demands for faster and lower power consumption in electronic devices.
Implementation Method 1
The MTJ pattern includes two magnetic materials and an insulating layer there between. According to the magnetization directions of the two magnetic materials, a resistance value of the MTJ pattern may vary.
Implementation Method 2
both magnetic layers may have an in-plane magnetization parallel to a film plane of the magnetic tunnel junction
Implementation Method 3
the first magnetic layer may be crystallized
Data Source
AI summary
Magnetic memory devices include a magnetic tunnel junction including a free layer, a pinned layer, and a tunnel barrier layer between the free layer and the pinned layer. At least one of the free layer and the pinned layer includes a first vertical magnetic layer on the tunnel barrier layer and including boron (B), and a second vertical magnetic layer on the first vertical magnetic layer and having a lower B content than the first vertical magnetic layer. The first vertical magnetic layer is between the tunnel barrier layer and the second vertical magnetic layer, and a thickness of the second vertical magnetic layer is thinner than a thickness of the first vertical magnetic layer.