Boron Interface Layer in 3D NAND Contacts to Block Halogen Diffusion

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Solution Overview

Problem

Microelectronic devices, particularly 3D NAND devices, face challenges in defect formation due to increasing complexity and the need for reduced feature dimensions and spacing, which can lead to issues like void formation and halogen species diffusion, affecting performance and longevity.

Innovation Solution

Incorporating a boron-containing material between the stack structure and the liner material in the microelectronic device to prevent halogen species diffusion and reduce void formation by reacting with residues during device formation, thereby enhancing device performance and longevity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If feature dimensions and spacing are reduced to increase integration density, then device integration density is improved, but defect formation increases due to void formation and halogen species diffusion

Engineering Contradiction:

Improveintegration densityVSAvoiddefect formation

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

A boron-containing material is introduced as an intermediary layer between the liner material and the stack structure. This intermediate layer reacts with halogen species to form a stable compound, preventing halogen diffusion into the liner material and subsequent void formation. The intermediary layer thus resolves the contradiction by enabling reduced feature dimensions while maintaining device reliability through defect prevention.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The invention converts the harmful effect of halogen species diffusion into a beneficial outcome by allowing halogen species to react with the boron-containing material instead of diffusing into the liner material. The halogen species, which would normally cause void formation and defects, are now utilized to form a stable boron-halogen compound at the interface, thereby preventing damage while maintaining the benefits of reduced feature dimensions.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

2Reliability

If complex 3D structures are formed to increase integration, then device performance is improved, but manufacturing complexity and defect susceptibility increase

Engineering Contradiction:

Improvedevice performanceVSAvoidmanufacturing complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The boron-containing material is deposited on the stack structure before forming the liner material and contact structures. This preliminary action ensures that the halogen species barrier is in place before subsequent manufacturing steps, preventing defect formation during complex 3D structure fabrication. The preliminary placement of the protective layer simplifies manufacturing by preventing defects that would otherwise require complex repair or rework processes.

Inventive Principle:

Principle #10Preliminary action

3Area of stationary object

If feature spacing is reduced to increase density, then area utilization is improved, but halogen species diffusion and void formation increase

Engineering Contradiction:

Improvearea utilizationVSAvoidhalogen species diffusion

Core Design Contradiction:

Area of stationary objectVSObject-affected harmful factors

Solution Approach 1:

The boron-containing material serves as a protective intermediary between the stack structure and liner material, particularly effective in regions where feature spacing is reduced. This intermediate layer prevents halogen species from diffusing into the liner material even when features are closely spaced, thereby maintaining area utilization benefits while eliminating the harmful diffusion effect.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The boron-containing material effectively prevents halogen species diffusion and reduces void formation, improving the performance and longevity of microelectronic devices by stabilizing the liner material and maintaining structural integrity.

Implementation Method 1

reacting with residues during device formation, thereby enhancing device performance and longevity

Methodology Applied

Scientific EffectChemical reaction: Chemical Bonding

Data Source

PatentUS12456685B2Microelectronic devices comprising a boron-containing material, and related electronic systems and methods

Publication Date: 2025.10.28 MICRON TECHNOLOGY INC

AI summary

A microelectronic device comprises a stack structure, a contact structure, a liner material, and a boron-containing material. The stack structure comprises alternating conductive structures and dielectric structures. The contact structure extends through the stack structure. The liner material is between the stack structure and the contact structure. The boron-containing material is between the liner material and the stack structure. Related electronic systems and methods are also described.