Boron Nitride Alloy Contacts for Low-Resistance III-Nitride Interfaces
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Solution Overview
Problem
Large contact resistance and resulting voltage drop across the interface between metal contacts and III-nitride semiconductor layers lead to poor power efficiency and decreased device reliability due to heating issues, which are not adequately addressed by existing technologies.
Innovation Solution
Incorporating a boron nitride alloy contact layer to adjust the work function of III-nitride semiconductor devices, reducing the contact barrier and improving the flow of electrons or holes, thereby forming ohmic contacts even when Schottky contacts are initially formed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal contact is formed on an n-type III-nitride semiconductor contact layer, then electrical contact is established, but large contact resistance occurs when the metal work function is larger than the semiconductor work function, leading to voltage drop and power loss
Solution Approach 1:
The patent changes the work function parameter of the semiconductor contact layer by incorporating boron to form a boron nitride alloy. This parameter change allows the semiconductor layer to form an ohmic contact with the metal contact, eliminating the Schottky barrier and reducing contact resistance, thereby improving power efficiency and reducing energy loss.
Solution Approach 2:
The patent uses a composite material approach by creating a boron nitride alloy contact layer that combines III-nitride semiconductor material with boron nitride. This composite structure enables simultaneous achievement of low contact resistance and good material stability, resolving the contradiction between contact quality and energy efficiency.
2Productivity
If the work function of the n-type semiconductor contact layer is increased to reduce Schottky barrier, then electron flow improves, but the contact may transition from ohmic to Schottky depending on metal work function
Solution Approach 1:
By adjusting the boron concentration in the contact layer, the work function of the semiconductor is increased to a level that ensures ohmic contact formation regardless of the metal contact's work function. This parameter adjustment stabilizes the contact type and ensures consistent electron flow performance.
3Productivity
If a p-type semiconductor contact layer is used with reduced work function to improve hole flow, then contact barrier decreases, but Schottky contact may still form depending on metal work function
Solution Approach 1:
The patent adjusts the work function of the p-type semiconductor contact layer by incorporating boron nitride alloy. This parameter change ensures that the contact barrier is reduced and ohmic contact is formed, improving hole flow while stabilizing the contact type regardless of the metal contact's work function.
4Device complexity
If conventional III-nitride contact layers are used without boron, then material simplicity is maintained, but contact resistance remains large leading to heating issues and decreased device reliability
Solution Approach 1:
The patent introduces boron nitride alloy into the III-nitride contact layer to create a composite material structure. This composition change reduces contact resistance and prevents heating issues, improving device reliability while maintaining acceptable structural simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces contact resistance and voltage drop, enhancing the power efficiency and reliability of III-nitride semiconductor devices by allowing for improved electron or hole flow, even in Schottky contacts.
Implementation Method 1
III-nitride semiconductor devices having a boron nitride alloy contact layer and method of production... at least one contact layer having a boron nitride alloy to adjust the work function of the contact layer relative to the work function of the contact layer without boron
Data Source
AI summary
A method for forming a III-nitride semiconductor device involves determining work functions of a first III-nitride contact layer and a first metal contact. The determined work function of the first III-nitride contact layer is based on a group III element of the first III-nitride contact layer. Based on the determined work functions of the first III-nitride contact layer and of the first metal contact, it is determined that the work function of the first III-nitride contact layer should be adjusted. The III-nitride semiconductor device is formed including the first III-nitride contact layer adjacent to a second III-nitride contact layer, the first metal contact arranged on the first III-nitride contact layer, and a second metal contact arranged on the second III-nitride contact layer. The first III-nitride contact layer of the formed III-nitride semiconductor device is a boron nitride alloy having an amount of boron that adjusts the work function of the first III-nitride contact layer relative to the determined work function of the first metal layer based on the group III element of the first III-nitride contact layer.