Low-k Boron Nitride Layer for Diffusion Barrier Insulation
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Solution Overview
Problem
In the fabrication and operation of electronic and semiconductor devices, increased temperature and electrical stress can lead to material diffusion between constituent layers, deteriorating device properties and reducing reliability and durability. Additionally, signal delays can occur due to mutual interference from electric fields in highly integrated devices.
Innovation Solution
The development of boron nitride layers with a dielectric constant of 2.5 or less at an operating frequency of 100 kHz, which are fabricated using a plasma process at a temperature of 700° C. or less. These layers can be non-porous or include at least one pore, with a mass density of 1 to 3 g/cm3 and a breakdown field of 4 MV/cm or more.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional materials are used as interlayer insulating layers, then device fabrication is straightforward, but material diffusion occurs between adjacent layers at elevated temperatures, deteriorating device properties and reliability
Solution Approach 1:
The patent introduces a boron nitride layer as an intermediary diffusion barrier between adjacent constituent layers. This intermediate layer prevents direct contact and diffusion between materials that would otherwise interact harmfully at elevated temperatures, thereby maintaining device reliability without requiring complex multi-layer structures.
Solution Approach 2:
The patent specifies precise parameter ranges for the boron nitride layer including dielectric constant of 2.5 or less, mass density of 1 to 3 g/cm³, and breakdown field of 4 MV/cm or more. These parameter changes optimize the material's performance as a diffusion barrier while maintaining compatibility with existing device fabrication processes.
2Adaptability or versatility
If the degree of integration of devices is increased to improve functionality, then device capabilities are enhanced, but material diffusion between adjacent layers becomes more difficult to control and signal delays occur due to electric field interference
Solution Approach 1:
The boron nitride layer serves as a mediator between densely packed adjacent layers, preventing material diffusion even at high integration densities. Its placement between constituent layers allows for closer spacing of functional elements while maintaining reliability through effective diffusion barrier properties.
Solution Approach 2:
The patent specifies that the boron nitride layer may be non-porous or include at least one pore with controlled characteristics. This porous structure allows the material to maintain its diffusion barrier function while accommodating stress and preventing crack propagation in highly integrated devices.
3Speed
If a low dielectric constant material is used to reduce signal delays, then signal transmission speed is improved, but the material may have insufficient breakdown field strength
Solution Approach 1:
The patent optimizes the dielectric constant parameter to 2.5 or less to reduce signal delays and improve signal transmission speed. Simultaneously, the breakdown field parameter is maintained at 4 MV/cm or more through careful material selection and processing, achieving both fast signal transmission and high electrical strength.
Solution Approach 2:
The boron nitride layer can be used in combination with other materials to create a composite structure that achieves both low dielectric constant for fast signaling and high breakdown field for electrical strength, optimizing performance for high-speed, high-reliability applications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The boron nitride layers effectively reduce material diffusion and signal delays, enhancing the reliability and durability of electronic and semiconductor devices. Their low dielectric constant and high breakdown field make them suitable for use as interlayer insulating layers and diffusion barriers, improving device performance and integration density.
Implementation Method 1
growing the boron nitride layer on the substrate using a plasma from a reaction gas including a boron nitride source at a temperature of about 700° C. or less
Implementation Method 2
growing the boron nitride layer on the substrate using a plasma from a reaction gas including a boron nitride source
Data Source
AI summary
A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.