Boron Nitride Deposition Using Halogen Precursors
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Solution Overview
Problem
Existing methods for depositing boron nitride films face challenges such as high costs due to the use of expensive precursors like borazine, contamination from polymerization, and resulting films with poor barrier resistance and high dielectric constants.
Innovation Solution
A method involving a boron-halogen compound and a substituted hydrazine nitrogen precursor, used in a chemical vapor deposition process with or without plasma excitation, to form boron nitride with improved properties like lower dielectric constants, higher barrier resistance, and enhanced mechanical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If PECVD processes using borazine as a precursor are used to deposit boron nitride films, then boron nitride films can be formed, but the precursor cost is high and polymerization can occur leading to contamination and undesired film properties
Solution Approach 1:
The patent changes the chemical parameters by substituting borazine with alternative precursors such as BCl3, BBr3, BI3 combined with NH3, N2H4, or other nitrogen-containing compounds. This parameter change eliminates polymerization issues while maintaining film deposition capability, directly resolving the contradiction between film quality and contamination
Solution Approach 2:
The patent employs simpler, more stable inorganic precursors (boron halides and nitrogen compounds) that are less expensive and do not suffer from polymerization. These precursors are consumed in controlled reactions without forming persistent polymeric contaminants, addressing both cost and contamination concerns
2Productivity
If traditional deposition techniques are used to form boron nitride films, then films can be deposited, but the films exhibit poor barrier resistance and high dielectric constants
Solution Approach 1:
The patent achieves superior film properties by changing deposition parameters including using plasma-enhanced processes, controlling temperature ranges (200-450°C), and optimizing precursor ratios. These parameter changes produce films with dielectric constants below 2.6 and improved barrier resistance, resolving the contradiction between deposition efficiency and film quality
Solution Approach 2:
The patent creates composite-like film structures through controlled deposition of boron nitride with specific stoichiometry and density. The films exhibit composite properties combining low dielectric constant with high barrier resistance, achieving manufacturing precision requirements while maintaining productivity
3Reliability
If plasma excitation is used during deposition, then film formation can be enhanced, but process complexity and energy consumption increase
Solution Approach 1:
The patent applies plasma excitation selectively and partially - using it only when needed to enhance specific film properties or enable deposition at lower temperatures. The process can operate with or without plasma excitation depending on requirements, reducing overall energy consumption while maintaining film formation quality when plasma is applied
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves more conformal and desirable boron nitride films with lower dielectric constants, higher etch selectivity, and improved mechanical properties compared to traditional techniques.
Implementation Method 1
A method involving a boron-halogen compound and a substituted hydrazine nitrogen precursor, used in a chemical vapor deposition process with or without plasma excitation, to form boron nitride
Implementation Method 2
plasma excitation of one or more gases during a deposition process
Data Source
AI summary
Methods for depositing boron nitride on a surface of a substrate are provided. Exemplary methods include providing a boron precursor comprising a boron-halogen compound comprising one or more of iodine and bromine to a reaction chamber and providing a nitrogen precursor comprising a substituted hydrazine compound to the reaction chamber.