Boron Nitride Interconnect Structure for Diffusion and Signal Delay
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Solution Overview
Problem
In electronic devices and semiconductor fabrication, the increase in temperature and electrical stress leads to material diffusion between layers, deteriorating device properties and reliability, and signal delays due to electric field interference, which becomes more challenging as integration levels rise.
Innovation Solution
The use of a boron nitride layer as a diffusion barrier and interlayer insulating layer to prevent conductive material diffusion and reduce signal delays, with specific configurations including amorphous or nanocrystalline boron nitride layers with controlled thickness, dielectric constant, and hydrogen content, functioning as both a diffusion barrier and interlayer insulating layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional diffusion barrier layers are used to prevent material diffusion, then reliability is improved, but device complexity and manufacturing difficulty increase due to multiple layer stacking
Solution Approach 1:
The boron nitride layer is designed to perform multiple functions simultaneously: it serves as both a diffusion barrier layer to prevent material diffusion and as an interlayer insulating layer to provide electrical isolation. This multi-functionality reduces the total number of layers needed in the device structure, thereby simplifying the overall device complexity while maintaining reliability
Solution Approach 2:
The patent combines the diffusion barrier layer and interlayer insulating layer into a single integrated layer structure using boron nitride. Instead of stacking separate layers for diffusion prevention and electrical insulation, these functions are merged into one layer, reducing manufacturing steps and structural complexity
2Productivity
If the degree of integration is increased to improve productivity, then more devices can be fabricated, but material diffusion between adjacent layers worsens
Solution Approach 1:
The boron nitride layer provides locally optimized diffusion barrier properties at each interface between conductive and dielectric layers. The layer is positioned precisely where diffusion occurs, providing targeted protection without requiring additional layers throughout the entire device structure, thus enabling higher integration density while maintaining reliability
3Manufacturing precision
If layer thickness is reduced to improve manufacturing precision, then signal delay is reduced, but diffusion barrier effectiveness worsens
Solution Approach 1:
The patent utilizes the unique properties of boron nitride material to achieve effective diffusion barrier performance at reduced thickness. By changing the material parameter (using boron nitride instead of conventional materials), the layer can be made thinner for better signal performance while maintaining or even improving diffusion barrier effectiveness due to the material's inherent properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The boron nitride layers effectively limit material diffusion and reduce parasitic capacitance, enhancing the reliability and durability of electronic devices by maintaining low dielectric constant and high breakdown field, even at high integration levels.
Implementation Method 1
a diffusion barrier layer between the conductive layer and the dielectric layer, the diffusion barrier layer configured to limit a conductive material of the conductive layer from diffusing into the dielectric layer
Implementation Method 2
at least one of the dielectric layer and the diffusion barrier layer may have a dielectric constant of 2.5 or less at an operating frequency of 100 kHz
Data Source
AI summary
An interconnect structure and an electronic apparatus including the interconnect structure are provided. The interconnect structure includes a conductive layer; a dielectric layer configured to surround at least a part of the conductive layer; and a diffusion barrier layer disposed between the conductive layer and the dielectric layer and configured to limit and/or prevent a conductive material of the conductive layer from diffusing into the dielectric layer, and at least one of the dielectric layer and the diffusion barrier layer includes a boron nitride layer of a low dielectric constant.