Boron Nitride Mask Patterning for Uniform 3D NAND Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor deposition methods face challenges in producing high-quality, uniform material layers for intricate patterning, especially as device sizes shrink, due to issues with material uniformity and the use of silicon-containing masks that can lead to tapered openings and clogging during etching processes in 3D NAND structures.
Innovation Solution
The use of a boron-and-nitrogen material deposited using a plasma-enhanced process within a semiconductor processing chamber, characterized by a high film density and low absolute film stress, which forms a mask that limits re-deposition and maintains feature geometries, facilitating uniform opening profiles and improved etching selectivity without silicon incorporation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If silicon-containing masks are used for patterning, then etching selectivity is improved, but tapered openings and clogging occur during etching processes
Solution Approach 1:
The patent changes the material composition parameters of the mask from silicon-containing to boron-and-nitrogen material, fundamentally altering the etching behavior and eliminating the harmful tapered openings and clogging effects while maintaining good etching selectivity
Solution Approach 2:
The patent uses a composite boron-and-nitrogen material system deposited through plasma-enhanced chemical vapor deposition, combining the benefits of both elements to achieve low sputtering rates and improved etching selectivity without the harmful effects of silicon-containing masks
2Productivity
If device sizes are shrunk to improve integration density, then productivity is improved, but material uniformity deteriorates
Solution Approach 1:
The patent optimizes deposition parameters including plasma power, substrate temperature, and precursor flow rates to achieve uniform film deposition at scaled dimensions, maintaining material uniformity even as device sizes shrink for higher integration density
Solution Approach 2:
The patent replaces conventional deposition methods with plasma-enhanced chemical vapor deposition, using plasma chemistry to achieve more uniform material distribution and better control over film properties at reduced feature sizes
3Ease of manufacture
If conventional deposition methods are used, then ease of manufacture is maintained, but film density and material uniformity deteriorate
Solution Approach 1:
The patent substitutes conventional thermal deposition with plasma-enhanced chemical vapor deposition, leveraging plasma activation to achieve superior film density and uniformity while maintaining process compatibility with existing semiconductor manufacturing workflows
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables more uniform and precise patterning of carbon hardmasks, reducing pattern collapse and maintaining feature geometries, thereby improving the formation of memory hole patterns and enhancing etching selectivity over conventional technologies.
Implementation Method 1
A plasma-enhanced process within a semiconductor processing chamber... depositing a boron-and-nitrogen material on a substrate
Data Source
AI summary
Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.