Boron Nitride Support Patterns for Storage Node Stability
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Solution Overview
Problem
Conventional semiconductor devices face issues with storage nodes leaning and cracks in support patterns due to high tensile stress, leading to non-uniform dielectric layer formation and degraded voltage discharge characteristics.
Innovation Solution
The use of a boron nitride (BN) layer with a hexagonal structure as support patterns, formed through a thermal CVD process, which provides compressive stress and prevents cracking, thereby stabilizing storage nodes and ensuring uniform dielectric layer formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If support patterns are formed using a nitride layer under low-pressure conditions, then storage nodes are supported to prevent leaning, but high tensile stress causes cracks in the support patterns
Solution Approach 1:
The patent changes the material parameter from nitride layer to boron nitride (BN) layer, which fundamentally alters the stress characteristics from tensile to compressive stress, thereby preventing cracks while maintaining storage node support
Solution Approach 2:
The patent uses a composite structure consisting of a BN layer formed on an insulation layer, combining the mechanical support function with stress management properties to achieve both storage node stability and crack prevention
2Productivity
If the gap between storage nodes is narrowed to increase integration density, then device integration is improved, but storage nodes become more prone to leaning during dip-out process
Solution Approach 1:
The BN layer is formed in advance before the dip-out process, creating a protective and supportive structure that prevents storage node leaning during subsequent processing steps, enabling narrow gap structures to maintain stability
3Stability of the object's composition
If cracks occur in support patterns, then storage node support is compromised, but non-uniform dielectric layer formation and leakage capacitance occur as secondary effects
Solution Approach 1:
The BN layer with compressive stress acts as a preventive measure against crack formation, cushioning the structure against tensile stresses that would otherwise lead to cracks and subsequent reliability issues
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The BN layer effectively prevents storage nodes from leaning and suppresses leakage capacitance, enhancing the reliability and voltage discharge characteristics of semiconductor devices.
Implementation Method 1
a BN layer 214a is formed via a thermal CVD process
Implementation Method 2
the support patterns 214 comprise a BN layer having a hexagonal structure... The BN layer having the hexagonal structure has a large etching selectivity... It has a compressive stress
Data Source
AI summary
A semiconductor device for preventing the leaning of storage nodes and a method of manufacturing the same is described. The semiconductor device includes support patterns that are formed to support a plurality of cylinder type storage nodes. The support patterns are formed of a BN layer and have a hexagonal structure. The BN layer forming the support patterns has compressive stress as opposed to tensile stress and can therefore withstand cracking in the support patterns.