Nitrogen-Boron Diffusion Agent for Uniform Semiconductor Substrate Processing
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Solution Overview
Problem
Existing methods for diffusing impurities into semiconductor substrates with three-dimensional nanoscale structures face challenges such as non-uniform ion implantation, crystal damage, and difficulties in covering inner surfaces, leading to performance deterioration and defects in devices like CMOS image sensors and logic LSI devices.
Innovation Solution
A diffusion agent composition containing a boron compound with a nitrogen atom is applied to form a diffusion layer, allowing for uniform impurity diffusion even at low temperatures, effectively addressing the challenges of non-uniformity and crystal damage by forming a thin film that suppresses external diffusion and enhances internal impurity distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion implantation method is used to diffuse impurities into semiconductor substrate, then impurity diffusion can be achieved, but point defects and point defect clusters are formed near the surface causing performance deterioration
Solution Approach 1:
The patent introduces an organic compound as an intermediary carrier to transport boron atoms onto the semiconductor substrate surface. This organic compound forms a molecular layer that releases boron atoms during heating, avoiding direct ion implantation damage while achieving controlled impurity diffusion. The organic compound acts as a mediator between the boron source and the substrate, preventing harmful point defects.
Solution Approach 2:
The patent replaces the mechanical ion implantation process with a chemical/thermal decomposition process. Instead of using high-energy ion beams to force boron into the substrate, the method uses organic compound decomposition at elevated temperatures to release boron atoms that then diffuse into the substrate naturally, eliminating mechanical damage and point defect formation.
2Manufacturing precision
If ion implantation method is used on semiconductor substrate with three-dimensional nanoscale structure, then impurity diffusion can be attempted, but uniform implantation into side surfaces and inner surfaces of concave portions cannot be achieved
Solution Approach 1:
The patent employs a liquid or gaseous organic compound that can flow and penetrate into three-dimensional nanoscale structures. The organic compound solution or vapor can access side surfaces and inner surfaces of concave portions uniformly, ensuring consistent boron atom distribution throughout complex substrate geometries that solid ion beams cannot reach uniformly.
Solution Approach 2:
The patent changes the physical state and delivery mechanism of boron from solid ion beams to organic compound molecules in liquid or gaseous form. This parameter change allows the boron source to adapt to three-dimensional nanoscale structures, enabling uniform coating and subsequent diffusion across complex surfaces including vertical sidewalls and recessed areas.
3Manufacturing precision
If ion implantation method is used to diffuse impurities into semiconductor substrate with fine fins, then impurity diffusion can be achieved, but crystal damage occurs causing variation in device properties and stand-by leak current
Solution Approach 1:
The patent replaces high-energy mechanical ion implantation with gentle thermal decomposition of organic compounds. Boron atoms are released from the organic compound during controlled heating and diffuse into the substrate without the mechanical impact that causes crystal damage. This eliminates defects that would lead to device property variations and stand-by leak current.
Solution Approach 2:
The patent changes the energy delivery mechanism from high-energy ion bombardment to low-energy thermal diffusion. By controlling temperature and heating time, boron atoms diffuse into the substrate in a controlled manner that preserves crystal integrity, preventing the formation of damage-induced defects that compromise device reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables uniform and efficient diffusion of boron into semiconductor substrates with three-dimensional structures, reducing defects and improving the performance of devices like CMOS image sensors and logic LSI devices, even at temperatures not higher than 1000°C.
Implementation Method 1
an impurity diffusion component (A), which is a boron compound including a nitrogen atom... diffusing impurities into a semiconductor substrate... uniform impurity diffusion even at low temperatures
Data Source
AI summary
A diffusion agent composition that can be evenly applied onto the whole area of an inner surface of the fine voids, whereby boron can be well and uniformly diffused into the semiconductor substrate even by heating at a low temperature, and a method for manufacturing a semiconductor substrate using the diffusion agent composition. In a diffusion agent composition including an impurity diffusion component, the impurity diffusion component, which can be applied onto a surface of a semiconductor substrate to form a diffusion layer, and which is a boron compound including a nitrogen atom, is used.