Boron Interlayer Wiring Structure for Semiconductor Reliability
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Solution Overview
Problem
Existing wiring structural bodies face challenges in achieving both miniaturization of wiring patterns and reliable electrical connections, which are essential for downsizing and high integration in semiconductor devices.
Innovation Solution
A method involving the formation of a boron layer on an insulating layer followed by a metal layer through plating, allowing for accurate patterning and stable electrical connections, enabling miniaturization and reliability in the wiring pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the wiring pattern is miniaturized for downsizing and high integration, then the device size is reduced and integration is improved, but the reliability of electrical connection deteriorates
Solution Approach 1:
A boron layer is introduced as an intermediary between the insulating layer and the metal layer. This boron layer serves as a mediator that enables both fine patterning (achieving miniaturization) and stable metal layer formation (ensuring electrical connection reliability), thus resolving the contradiction between device miniaturization and electrical connection reliability.
Solution Approach 2:
The boron layer is formed in advance before the metal layer deposition. This preliminary action of forming the boron layer enables subsequent isotropic plating of the metal layer, which is critical for achieving both fine wiring patterns and reliable electrical connections in miniaturized devices.
2Device complexity
If a metal layer is formed directly on an insulating layer, then the process is simplified, but the metal layer cannot be stably formed and electrical connection reliability deteriorates
Solution Approach 1:
The boron layer acts as a necessary intermediary between the insulating layer and metal layer. Although this adds a process step, it enables stable metal layer formation through isotropic plating, ensuring electrical connection reliability that cannot be achieved by direct metal deposition on the insulating layer.
3Manufacturing precision
If vapor deposition is used to form the boron layer, then the boron layer can be isotropically formed accurately, but the process time increases
Solution Approach 1:
The patent utilizes vapor deposition parameters to achieve isotropic formation of the boron layer. By controlling deposition parameters, the process achieves high patterning precision while managing process time, enabling accurate fine wiring pattern formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of fine wiring patterns with reliable electrical connections, addressing the need for both miniaturization and connection reliability in semiconductor devices.
Implementation Method 1
in the second step, the boron layer may be isotropically formed on the insulating layer by a vapor deposition
Implementation Method 2
a third step of forming a metal layer on the boron layer by plating
Implementation Method 3
a nickel layer may be formed on the boron layer by plating
Data Source
AI summary
Provided is a method for producing a wiring structural body provided with a wiring pattern, the method including a first step of forming an insulating layer on a surface of a silicon substrate along at least a region for forming the wiring pattern, a second step of forming a boron layer on the insulating layer along the region, and a third step of forming a metal layer on the boron layer by plating.