Amorphous Lithium Borosilicate Co-Deposition Below 180°C
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Solution Overview
Problem
Current methods for preparing amorphous lithium borosilicate and doped lithium borosilicate compounds for use in thin film batteries require high temperatures, which is problematic for materials with low melting points like lithium, and result in reduced ionic conductivity and stability issues.
Innovation Solution
A vapour deposition method that uses a substrate temperature below 180°C, with a controlled flow rate of oxygen at least 8×10−8 m3/s, to co-deposit lithium, oxygen, boron, and silicon, forming amorphous lithium borosilicate or doped lithium borosilicate compounds while maintaining acceptable ionic conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high temperature processing is used to prepare amorphous lithium borosilicate, then the material can be formed, but the ionic conductivity decreases and stability issues occur
Solution Approach 1:
The patent changes the processing temperature parameter from conventional high temperatures (>180°C) to low temperatures (<180°C), specifically achieving amorphous lithium borosilicate formation at temperatures below the melting point of lithium (180.5°C). This parameter change resolves the contradiction by enabling material formation while maintaining stability and avoiding the degradation associated with high temperature processing.
Solution Approach 2:
The patent uses a composite deposition approach combining multiple vapor sources (lithium, boron, silicon, oxygen) to form the amorphous lithium borosilicate compound. This composite material approach allows the formation of a stable amorphous structure at low temperatures, resolving the contradiction between formability and stability.
2Reliability
If high temperature processing is used to prepare amorphous lithium borosilicate, then the material can be formed, but the ionic conductivity is reduced
Solution Approach 1:
The patent achieves high ionic conductivity (>1×10^-7 S/cm) by changing the processing temperature parameter to low temperatures (<180°C). This resolves the contradiction by demonstrating that low temperature processing, contrary to conventional wisdom, produces materials with superior ionic conductivity compared to high temperature processing.
Solution Approach 2:
The patent employs controlled vapor delivery systems with specific flow rates (oxygen flow rate ≥8×10^-8 m³/s) to achieve proper stoichiometry and amorphous structure formation at low temperatures. This pneumatic control enables high ionic conductivity without high temperature processing.
3Ease of manufacture
If conventional vapor deposition methods are used, then deposition can occur, but the substrate temperature must be above 180°C which is problematic for lithium
Solution Approach 1:
The patent fundamentally changes the substrate temperature parameter from conventional (>180°C) to low (<180°C), specifically operating below the melting point of lithium (180.5°C). This resolves the contradiction by enabling deposition processes suitable for lithium-containing materials while maintaining ease of manufacture through controlled vapor delivery.
Solution Approach 2:
The patent uses controlled vapor phases as intermediaries to deliver lithium, boron, silicon, and oxygen to the substrate at low temperatures. This intermediary approach allows deposition to occur without direct high temperature contact, resolving the contradiction between manufacturability and temperature constraints.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the reliable preparation of amorphous lithium borosilicate compounds with ionic conductivity above 1×10−7 S/cm at lower temperatures, suitable for use in lithium-based batteries, enhancing electrode protection and stability.
Implementation Method 1
A vapour deposition method that uses a substrate temperature below 180°C, with a controlled flow rate of oxygen at least 8×10−8 m3/s, to co-deposit lithium, oxygen, boron, and silicon, forming amorphous lithium borosilicate or doped lithium borosilicate compounds
Implementation Method 2
co-depositing the component elements from the vapour sources onto the substrate wherein the component elements react on the substrate to form the amorphous compound
Data Source
AI summary
The present invention provides a vapour deposition method for preparing an amorphous lithium borosilicate compound or doped lithium borosilicate compound, the method comprising: providing a vapour source of each component element of the compound, wherein the vapour sources comprise at least a source of lithium, a source of oxygen, a source of boron and a source of silicon, and, optionally, a source of at least one dopant element; providing a substrate at a temperature of less than about 180° C.; delivering a flow of said lithium, said oxygen, said boron and said silicon, and, optionally, said dopant element, wherein the rate of flow of said oxygen is at least about 8×10−8 m3/s; and co-depositing the component elements from the vapour sources onto the substrate wherein the component elements react on the substrate to form the amorphous compound.