Composite Bottle-Shaped TSV for Multi-Rule Die Integration
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Solution Overview
Problem
The complexity of manufacturing and integration in semiconductor devices leads to deficiencies and performance limitations, necessitating improved structures and processes to enhance functionality and efficiency.
Innovation Solution
A semiconductor device structure featuring a composite bottle-shaped through-silicon via that electrically connects semiconductor dies with different design rules, utilizing a through silicon via with a bottle-neck shaped profile and a tapered profile, allowing for the connection of semiconductor dies with varying critical dimensions and pattern densities, and a method for preparing this structure involving multiple mask layers and etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional through-silicon via structures are used, then manufacturing process is simpler, but functional density and integration capability are limited
Solution Approach 1:
The through-silicon via is divided into multiple sections with different cross-sectional areas: a first section with a first cross-sectional area, a second section with a second cross-sectional area, and a third section with a third cross-sectional area. This segmentation allows each section to serve different functional purposes, increasing overall integration capability while managing manufacturing complexity through systematic design.
Solution Approach 2:
The via structure implements nesting by placing conductive plugs and barrier layers within the via cavity. The conductive plug is nested within the via, and the barrier layer is nested around the conductive plug, creating a multi-layer nested structure that maximizes space utilization and functional density within the silicon substrate.
2Adaptability or versatility
If semiconductor dies with different design rules are integrated, then functionality and performance are enhanced, but manufacturing complexity increases
Solution Approach 1:
The via structure serves multiple functions: it provides electrical connection between different semiconductor dies, acts as a mechanical anchor, and facilitates thermal management. The different cross-sectional areas accommodate various design rules and pitch requirements, making the structure universally applicable to different die configurations and manufacturing processes.
Solution Approach 2:
Different sections of the via have different cross-sectional areas optimized for local requirements. The first section near the first die has one dimension, the second section in the middle has another dimension, and the third section near the second die has a third dimension. This local quality variation allows adaptation to different design rules at different locations without increasing overall process complexity.
3Reliability
If via cross-sectional area is increased, then electrical connection capability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The via is segmented into three sections with different cross-sectional areas. This segmentation allows the total conductive area to be increased for better electrical connection reliability, while each individual section maintains manageable dimensions that are easier to control with standard manufacturing precision, thus resolving the contradiction between reliability and precision requirements.
Data Source
AI summary
A semiconductor device structure includes a silicon layer disposed over a first semiconductor die, and a first mask layer disposed over the silicon layer. The semiconductor device structure also includes a second semiconductor die disposed over the first mask layer, and a through silicon via penetrating through the silicon layer and the first mask layer. A bottom surface of the through silicon via is greater than a top surface of the through silicon via, and the top surface of the through silicon via is greater than a cross-section of the through silicon via between and parallel to the top surface and the bottom surface of the through silicon via.