Bottom Isolation Assembly for Uniform Semiconductor Processing
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Solution Overview
Problem
Current semiconductor processing chambers experience non-uniformities in thin film deposition due to asymmetries in the processing chamber volume and RF environment, leading to distortion and particulates in the deposited films.
Innovation Solution
A plasma-processing chamber with a bottom isolation assembly that forms a seal with the chamber lid assembly to create a uniform and isolated processing volume, using ceramic or metal components for improved uniformity and isolation, and optionally incorporating pumping plates and RF hardware for uniform pumping and RF signal tuning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional processing chamber is used, then the chamber can accommodate substrates for processing, but non-uniformities and distortion occur in the deposited film due to asymmetry in the processing chamber volume and RF environment
Solution Approach 1:
The patent applies asymmetry by introducing a bottom isolation assembly that creates an asymmetric isolation within the chamber to compensate for the inherent asymmetric structure of the processing chamber. This asymmetric isolation structure counterbalances the asymmetric RF and processing environment, achieving uniform film deposition despite the chamber's asymmetric geometry
2Manufacturing precision
If pumping plates and liners are added to mitigate asymmetry, then some uniformity improvement may be achieved, but the asymmetry in the processing volume especially in the slit-valve tunnel volume cannot be fully mitigated, and particulates are still generated
Solution Approach 1:
The patent segments the processing chamber into two distinct volumes: an upper processing volume for substrate deposition and a lower isolation volume for pumping and support functions. This segmentation is achieved through the bottom isolation assembly that creates a physical divide, allowing each volume to be optimized independently - the upper volume for uniform film deposition and the lower volume for pumping, thereby eliminating particulate generation in the processing zone
3Manufacturing precision
If the processing chamber volume is reduced to improve uniformity, then film uniformity may improve, but the chamber cannot accommodate proper pumping infrastructure and substrate support assembly
Solution Approach 1:
The patent resolves the volume conflict by transitioning to a vertical dimensional arrangement. The bottom isolation assembly creates distinct vertical zones: the upper volume optimized for uniform film processing and the lower volume housing pumping infrastructure. This vertical segmentation allows both small processing volume for uniformity and adequate space for support infrastructure to coexist
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves increased uniformity and isolation in the processing volume, reducing distortion and particulates, and allowing for improved control of processing conditions, leading to enhanced substrate throughput and film quality.
Implementation Method 1
A seal is formed between the bottom isolation assembly and the chamber lid assembly when the bottom isolation assembly is in the processing position
Implementation Method 2
plasma processes are often used for deposition or etching of various material layers
Implementation Method 3
plasma enhanced chemical vapor deposition (PECVD) allows deposition processes to be performed at lower temperatures
Data Source
AI summary
Implementations of the present disclosure generally relate to apparatus and methods for uniform deposition of thin films on substrates. In one implementation, a plasma-processing chamber comprises a chamber body including chamber walls, a chamber floor, and a lid support. The plasma-processing chamber further comprises a substrate support assembly at least partially disposed within the chamber body and configured to support a substrate. The plasma-processing chamber further comprises a lid assembly disposed over the support assembly and positioned on the lid support wherein the lid assembly and the chamber body define a first processing volume. The plasma-processing chamber further comprises a bottom isolation assembly that circumscribes at least a portion of the substrate support assembly and is vertically movable from a loading position to a processing position. A seal is formed between the bottom isolation assembly and the lid assembly when the bottom isolation assembly is in the processing position.