Bottom-Emitting VCSEL Array Layout for Optical Power Uniformity

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Solution Overview

Problem

Bottom-emitting VCSEL arrays face optical power uniformity issues due to lateral separation of electrical contacts, leading to resistance gradients and non-uniform optical power distribution, making them unsuitable for accurate detection and sensing applications.

Innovation Solution

A VCSEL array design with a metal layer on the bottom side of the substrate, featuring openings for light emission, reduces lateral voltage gradients and enhances optical power uniformity by allowing lateral current flow through the metal layer, thereby improving chip performance without increasing size.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If electrical contacts are laterally separated in bottom-emitting VCSEL arrays, then device complexity is reduced, but optical power uniformity deteriorates due to resistance gradients

Engineering Contradiction:
Improveelectrical contact configurationVSAvoidoptical power uniformity
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent introduces a bottom side metal layer on the substrate, adding a new dimensional pathway for current flow. Instead of relying solely on lateral current flow at the top surface, electrons can now travel through the substrate thickness dimension via the bottom metal layer, effectively creating a three-dimensional current distribution that reduces lateral voltage gradients and improves optical power uniformity across the emitter array

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The bottom side metal layer acts as an intermediary conductive path between the laterally separated electrical contacts. By providing this intermediate current flow pathway through the substrate, the patent mediates the resistance gradient issue caused by lateral contact separation, enabling uniform current distribution without requiring complex contact configurations

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If lateral current flow path is extended to improve uniformity, then optical power uniformity improves, but device complexity increases

Engineering Contradiction:
Improveoptical power uniformityVSAvoidcurrent path structure
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

Rather than extending the lateral current path which would increase device footprint and complexity, the patent extends the current path in the vertical dimension by adding a bottom metal layer. This allows current to flow laterally at the bottom surface while maintaining a compact device structure, achieving uniformity without increasing lateral dimensions or overall complexity

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

Instead of providing current flow pathways only at the top surface where contacts are located, the patent inverts the approach by adding a conductive layer at the bottom surface of the substrate. This inverted current path configuration allows electrons to enter from top contacts, flow through the active regions, and exit through the bottom metal layer, creating symmetric current distribution that improves uniformity without complicating the contact structure

Inventive Principle:
Principle #13The other way round (Inversion)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution achieves improved optical power uniformity across the emitter array, enabling more accurate optical detection and sensing applications with reduced complexity, and allows for the generation of light spots for three-dimensional sensing.

Implementation Method 1

a metal layer disposed on a bottom side of the substrate, where the metal layer is electrically connected to the second electrical contact, and where the metal layer includes one or more openings for light emission

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS11888293B2Bottom-emitting emitter array with a bottom side metal layer
Publication Date: 2024.01.30 WELLS FARGO BANK NA
  • US11888293B2 patent drawing
  • US11888293B2 patent drawing
  • US11888293B2 patent drawing

AI summary

In some implementations, an emitter array may include a substrate, an epitaxial structure on the substrate, a plurality of bottom-emitting emitters defined in the epitaxial structure, a first electrical contact positioned at a top side of the epitaxial structure, a second electrical contact positioned at the top side of the epitaxial structure, and a metal layer disposed on a bottom side of the substrate. The metal layer may be electrically connected to the second electrical contact. The metal layer may include one or more openings for light emission of the plurality of bottom-emitting emitters.