Bowl-Shaped Metal Nanostructure Array via Sputtering Annealing
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Solution Overview
Problem
The stability and specific morphology of bowl-shaped metal nanostructure arrays produced by electrochemistry processes are unstable due to chemical reagent intrusion, and achieving small nanostructures using Lift-off and dry etching techniques is challenging.
Innovation Solution
A method involving a substrate with a metal layer, pattern mask layer, annealing, and etching using physical and reactive gases to form a bowl-shaped metal nanostructure array, where the pattern mask layer is formed with protruding structures and annealed to create flaws, allowing for the formation of bowl-shaped concave structures and protruding members.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If electrochemistry processes are used to make bowl shaped metal nanostructure array, then the manufacturing process is simple, but the property and structure stability is poor due to intrusion of chemistry reagent
Solution Approach 1:
The patent replaces chemical etching processes with physical sputtering deposition. Instead of using chemical reagents to etch the metal layer, the invention uses a sputtering system with physical vapor deposition to form the bowl-shaped nanostructures. This substitution eliminates chemical reagent intrusion while maintaining manufacturing feasibility, thereby resolving the contradiction between ease of manufacture and reliability.
2Manufacturing precision
If Lift-off arts or dry etching techniques are used, then the manufacturing process is controllable, but it is difficult to make specific morphologies and small nanostructure
Solution Approach 1:
The patent utilizes parameter changes in the sputtering process, specifically varying the deposition angle from 0 to 85 degrees relative to the substrate normal, along with controlling deposition time and power parameters. These parameter adjustments enable precise control over the bowl-shaped morphology and nanoscale dimensions without requiring complex lift-off or dry etching procedures, thus resolving the contradiction between manufacturing precision and ease of manufacture.
3Ease of operation
If conventional etching methods are used, then the etching process is straightforward, but achieving small nanostructure dimensions is challenging
Solution Approach 1:
The patent replaces conventional chemical or plasma etching methods with physical sputtering deposition. By controlling the sputtering angle and deposition parameters, the method directly forms small nanostructure dimensions through physical means rather than chemical removal, achieving both operational simplicity and precise nanoscale control simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method stabilizes the nanostructure array and enables the creation of precise, small-scale nanostructures suitable for applications in nano-optics and biochemical sensors, enhancing the sensitivity of Raman detecting systems by increasing the electromagnetic field and Raman signal.
Implementation Method 1
annealing and forming a plurality of flaws in the pattern mask layer
Implementation Method 2
etching by physical etching gas and reactive etching gas
Implementation Method 3
etching by physical etching gas and reactive etching gas
Data Source
AI summary
A method for making bowl shaped metal nanostructure includes providing a metal layer located on a substrate. The metal layer has a top surface away from the substrate. A pattern mask layer is located on the top surface of the metal layer, wherein portion of the top surface of the metal layer is covered by the pattern mask layer. A plurality of flaws is formed in the pattern mask layer by annealing above substructure. After annealing, the substructure is etched by physical etching gas and reactive etching gas, to form the bowl shaped metal nanostructure.