Branched Alkyl Solvent Developer for Semiconductor Pattern Stability
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Solution Overview
Problem
In the production of high-precision semiconductor devices, existing developers struggle to form fine patterns with line widths of 20 nm or less without causing pattern collapse or bridge formation due to swelling issues during the development process.
Innovation Solution
A developer containing ketone-based or ether-based solvents with branched alkyl groups is used, which suppresses the penetration into the resist film, thereby inhibiting swelling and improving pattern collapse and bridge performance by creating a steric barrier, and is combined with a rinsing liquid containing organic solvents to enhance the drying efficiency and reduce defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional developer is used for developing the resist film, then the development process can be completed, but pattern collapse and bridge formation occur due to pattern swelling
Solution Approach 1:
The patent changes the chemical composition parameters of the developer by using a specific solvent system (cyclic carbonate solvent and chain carbonate solvent in controlled ratios) to alter the developer's penetration characteristics. This parameter change suppresses excessive pattern swelling while maintaining adequate development, thereby resolving the contradiction between manufacturing precision and pattern reliability
Solution Approach 2:
The patent creates a composite solvent system combining cyclic carbonate solvents (e.g., ethylene carbonate, propylene carbonate) with chain carbonate solvents (e.g., dimethyl carbonate, diethyl carbonate). This composite material approach balances the high penetration power of cyclic carbonates with the lower swelling tendency of chain carbonates, achieving both fine pattern formation and pattern stability
2Productivity
If the developer penetrates deeply into the resist film to dissolve the exposed portion, then development efficiency is improved, but pattern swelling increases leading to collapse
Solution Approach 1:
The patent adjusts the solvent composition parameters to achieve optimal penetration depth. The specific ratio of cyclic to chain carbonate solvents controls the developer's ability to penetrate the resist film, ensuring sufficient development efficiency while preventing excessive penetration that would cause pattern swelling and dimensional loss
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively stabilizes the formation of high-precision fine patterns by preventing pattern collapse and bridge formation, improving the dimensional uniformity and resolution of semiconductor devices.
Implementation Method 1
the penetration of the developer into the resist film is suppressed by the steric barrier due to the branched structure of the ketone-based or ether-based solvent having a branched alkyl group
Implementation Method 2
a step of developing the exposed resist film using the developer... forming a pattern by dissolving the exposed portion or unexposed portion of the resist film with a developer
Implementation Method 3
a step of rinsing the developed resist film using a rinsing liquid containing an organic solvent
Data Source
AI summary
Provided is a pattern forming method including the successive steps of: a resist film forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive composition; an exposure step of exposing the resist film; a step of developing the exposed resist film using a developer, and a step of rinsing the developed resist film using a rinsing liquid containing an organic solvent. The developer includes a ketone-based or ether-based solvent having a branched alkyl group. The organic solvent contained in the rinsing liquid includes an ether-based solvent having a branched alkyl group.