Branched Thin-Film Transistor Layout for Heat Dissipation Reliability
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Solution Overview
Problem
The source and drain branches of thin film transistors in existing display devices are arranged in a high concentration, leading to heat concentration and poor reliability of the display devices.
Innovation Solution
A thin film transistor design where the source and drain electrode branches are divided into multiple cells, each cell comprising multiple source, drain, and semiconductor branches, arranged in a multi-wiring design to improve heat dissipation and reduce heat generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the source and drain branches are arranged in high concentration to increase charging current, then the charging current of the TFT is improved, but heat concentration occurs leading to poor reliability
Solution Approach 1:
The source electrode is divided into multiple source electrode branches (first source electrode branch, second source electrode branch, etc.) and the drain electrode is divided into multiple drain electrode branches (first drain electrode branch, second drain electrode branch, etc.). These branches are spatially separated and arranged in a distributed manner rather than concentrated, allowing the charging current to be distributed across multiple paths. This segmentation reduces current density in each branch and disperses heat generation, solving the heat concentration problem while maintaining sufficient total charging current for high mobility oxide TFTs.
2Power
If the width to length ratio of the TFT channel is increased to increase charging current, then the charging current is improved, but the device area increases
Solution Approach 1:
Instead of increasing the width-to-length ratio in the traditional planar configuration, the patent introduces a multi-dimensional electrode branch structure. Multiple source and drain branches are arranged in a spatial distribution pattern, effectively utilizing the vertical and lateral dimensions to create parallel current paths. This dimensional approach increases the effective channel area for current flow without proportionally increasing the overall device footprint, achieving high charging current in a compact area suitable for non-display regions.
3Temperature
If multiple source and drain electrode branches are distributed to improve heat dissipation, then heat dissipation is improved, but the device complexity increases
Solution Approach 1:
The patent combines multiple source electrode branches into a unified source electrode structure and multiple drain electrode branches into a unified drain electrode structure. The branches are electrically connected in parallel between their respective terminals, creating a merged structure that functions as a single electrode while providing distributed heat dissipation. This merging approach maintains structural integrity and simplifies fabrication compared to completely separate electrodes, reducing device complexity while achieving improved thermal management.
Data Source
AI summary
The present disclosure provides a thin film transistor, a GOA circuit and an array substrate, the thin film transistor including a source electrode, including a source electrode wiring and a plurality of source electrode branches; a drain electrode, including a drain electrode wiring and a plurality of drain electrode branches; a gate; a semiconductor layer including a plurality of semiconductor branches; a plurality of source electrode branches. The plurality of drain electrode branches are in contact with the plurality of semiconductor branches and are divided into a plurality of cells; the source electrode wiring and the drain electrode wiring are arranged in a parallel and spaced apart, and the number m of one of the source electrode wiring and the drain electrode wiring is an integer greater than or equal to 2, and the number n of the other is an integer greater than or equal to 1.