Bridge-Arm Transistor Drive Circuit With Isolated High-Voltage Domains
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Solution Overview
Problem
In high-voltage bridge circuits, P-type semiconductor devices in different voltage domains interfere due to shared bulk potentials, which existing semiconductor manufacturing processes cannot isolate effectively without altering the process, leading to inefficiencies and interference.
Innovation Solution
The implementation of multiple isolation rings in the high-voltage region creates mutually isolated voltage domains, allowing P-type semiconductor devices to have independent bulk potentials without requiring changes to the existing semiconductor process, thereby preventing interference between devices in different domains.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If multiple P-type semiconductor devices are placed in the high-voltage region to drive different switching transistors, then the driving capability is improved, but the bulk potentials of these devices interfere with each other causing operational instability
Solution Approach 1:
The high-voltage region is segmented into multiple isolated voltage domains using isolation rings. Each P-type semiconductor device is placed in a separate voltage domain with its own isolated bulk potential, eliminating mutual interference while maintaining the ability to drive multiple switching transistors simultaneously.
Solution Approach 2:
Isolation rings are introduced as intermediary structures between P-type semiconductor devices in different voltage domains. These isolation rings act as mediators that electrically isolate the bulk potentials of adjacent P-type devices, preventing direct interference while allowing both devices to function independently.
2Reliability
If isolation structures are added to separate voltage domains, then the interference between P-type devices is reduced, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
Multiple isolation functions are merged into a single continuous isolation ring structure that simultaneously separates multiple voltage domains. This unified approach reduces the total number of discrete isolation components needed compared to using separate isolation structures between each pair of devices.
Solution Approach 2:
The isolation ring serves multiple functions: it electrically isolates bulk potentials between adjacent voltage domains, provides physical separation for device layout, and maintains structural integrity of the high-voltage region. This multi-functionality reduces the need for additional specialized isolation components.
3Ease of manufacture
If existing semiconductor manufacturing processes are used, then the manufacturing cost is controlled, but the processes cannot effectively isolate bulk potentials of P-type devices in different voltage domains
Solution Approach 1:
The isolation ring structure is implemented using standard semiconductor fabrication patterns that can be replicated across the wafer using existing photolithography and doping processes. This copying approach allows precise isolation to be achieved through repeated application of proven manufacturing techniques rather than requiring new process equipment.
Data Source
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AI summary
This application discloses a drive circuit of a bridge arm switching transistor, a drive circuit, and a power converter. The drive circuit of a bridge arm switching transistor includes a first switching transistor and a second switching transistor. A first terminal of the first switching transistor is connected to a power supply, a second terminal of the first switching transistor is connected to a first terminal of the second switching transistor, and a second terminal of the second switching transistor is grounded. The drive circuit includes a low-voltage region and at least two high-voltage regions isolated by at least two isolation rings, where the at least two high-voltage regions include a first high-voltage region and a second high-voltage region. The first high-voltage region corresponds to a first voltage domain, the second high-voltage region corresponds to a second voltage domain, and a voltage of the first voltage domain is different from a voltage of the second voltage domain. A semiconductor device configured to drive the second switching transistor is disposed in the low-voltage region. P-type semiconductor devices are disposed in each of the first high-voltage region and the second high-voltage region, and the P-type semiconductor devices are configured to drive the first switching transistor. The solution implements isolation of the P-type semiconductor devices in different voltage domains in the high-voltage region, thereby avoiding interference.