Bridge-in-Cavity Microelectronic Structure for Dense Interconnects
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Solution Overview
Problem
Conventional microelectronic packages face limitations in interconnect density, signal transfer speed, and miniaturization due to the use of solder attachment, which requires costly and complex manufacturing operations.
Innovation Solution
The introduction of microelectronic structures with a bridge component in a cavity of the substrate, allowing for higher interconnect density without the need for fine-pitch via formation and first-level interconnect plating, using a UV-curable adhesive to secure the bridge component in place quickly and reduce manufacturing complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If solder attachment is used to attach die to package substrate, then reliable electrical connection is achieved, but interconnect density is limited and manufacturing complexity increases
Solution Approach 1:
The package substrate is divided into two functional surfaces: a first surface with conventional solder balls for substrate attachment, and a second surface with through-substrate vias and contact pads for die attachment. This segmentation allows each surface to be optimized for its specific function, achieving high interconnect density on the second surface without compromising the reliability of the substrate attachment on the first surface.
Solution Approach 2:
The invention transitions from conventional single-sided solder attachment to a dual-sided through-substrate via architecture. By creating vertical pathways through the entire substrate thickness, the design adds a dimensional aspect to interconnection, enabling direct electrical contact between the die and substrate without requiring fine-pitch vias or plating on the attachment surface.
2Reliability
If conventional solder attachment is used, then electrical connection is established, but signal transfer speed is limited
Solution Approach 1:
The through-substrate via architecture creates direct vertical electrical pathways that shorten the signal path length compared to conventional surface-mounted connections. By penetrating through the substrate thickness, the via provides a more direct electrical route, reducing signal propagation delay and improving transfer speed while maintaining connection reliability.
3Quantity of substance
If fine-pitch via formation and first-level interconnect plating are used to achieve high interconnect density, then interconnect density increases, but manufacturing cost and complexity increase
Solution Approach 1:
The manufacturing process is segmented into two independent stages: first, forming through-substrate vias and contact pads on the second surface of the substrate; second, attaching the die to this pre-prepared surface. This segmentation eliminates the need for complex fine-pitch via formation and multiple plating operations, achieving high interconnect density through simpler, more cost-effective manufacturing steps.
Solution Approach 2:
The through-substrate vias and contact pads are formed in advance on the second surface of the substrate before die attachment. This preliminary preparation creates a ready-to-use interconnect structure that simplifies the subsequent die attachment process, eliminating the need for complex fine-pitch operations during final assembly.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves high interconnect density and flexibility in electronics design without excessive cost or complexity, enabling faster development and reducing manufacturing expenses.
Implementation Method 1
using a UV-curable adhesive to secure the bridge component in place quickly
Data Source
AI summary
Disclosed herein are microelectronic structures including bridges, and related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate with first and second metal layers; a cavity in the substrate, where a portion of the first and second metal layers, are exposed with the portion of the first metal layer partially overlapping the portion of the second metal layer; and a bridge component in the cavity, having a first conductive contact at a first face and a second conductive contact at a second face opposing the first face, the second face towards a bottom surface of the cavity, the portion of the first metal layer is between the second face of the bridge component and the portion of the second metal layer, and the second conductive contact is electrically coupled to the portion of the second metal layer in the cavity.