Semiconductor Package Bridge Die Height Layout for Planarization

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Solution Overview

Problem

The challenge in semiconductor packaging is the difficulty in achieving planarization with elements having different connection pad densities and pitches, leading to potential defects during the planarization process due to uniform height requirements for bridge dies and passive elements embedded in the interposer.

Innovation Solution

A semiconductor package design that includes a first redistribution layer with bridge dies and passive elements of varying connection pad pitches, where the height of each element is adjusted to accommodate different pitch densities, allowing for targeted planarization heights through the use of conductive posts and multiple redistribution layers, facilitating the suppression of defects during the planarization process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If bridge dies and passive elements are disposed at the same height in the interposer, then the structure is simplified and easier to manufacture, but defects occur in the subsequent planarization process when connection pads have different densities

Engineering Contradiction:
Improveease of element placementVSAvoidplanarization quality
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies local quality by allowing different elements (bridge dies and passive elements) to have different heights based on their specific requirements. Connection pads with higher density have elements disposed at one height, while connection pads with lower density have elements disposed at a different height, optimizing each local area for its specific function rather than enforcing uniformity across the entire interposer.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the height parameter of elements based on the density parameter of their connection pads. By adjusting the height of bridge dies and passive elements according to their connection pad density, the patent resolves the conflict between ease of manufacture and planarization quality, allowing the planarization process to accommodate varying element heights without defects.

Inventive Principle:
Principle #35Parameter changes

2Quantity of substance

If connection pads are disposed at higher density with finer size, then more wires can be accommodated, but the height of pillars that can be formed on each connection pad is limited

Engineering Contradiction:
Improvenumber of wiresVSAvoidpillar height
Core Design Contradiction:
Quantity of substanceVSLength of stationary object

Solution Approach 1:

The patent applies local quality by adjusting the height of elements based on the local connection pad density. In areas with high-density connection pads, elements are disposed at heights that accommodate the limited pillar height, while in areas with lower-density connection pads, elements can be disposed at greater heights, allowing each local region to optimize its structure for its specific wire density requirements.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS20250006696A1Semiconductor package and manufacturing method thereof
Publication Date: 2025.01.02 SAMSUNG ELECTRONICS CO LTD
  • US20250006696A1 patent drawing
  • US20250006696A1 patent drawing
  • US20250006696A1 patent drawing

AI summary

A semiconductor package may include a first redistribution layer, bridge dies on an upper surface of the first redistribution layer, a second redistribution layer on the bridge dies and electrically connected to the bridge dies, conductive posts between the first and second redistribution layer, and semiconductor chips on an upper surface of the second redistribution layer. Each bridge die may include connection pads on an upper surface of the bridge dies. A pitch between first connection pads of a first bridge die among the bridge dies may be smaller than a pitch between second connection pads of a second bridge die among the bridge dies. A distance between an upper surface of the first bridge die and a lower surface of the second redistribution layer may be smaller than a distance between an upper surface of the second bridge die and a lower surface of the second redistribution layer.