Bridge Die Semiconductor Package With Dielectric Noise Shield
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Solution Overview
Problem
Current semiconductor packages face challenges in achieving high density and high-speed operation while maintaining a small form factor, with issues related to signal transmission characteristics and noise interference due to the limited space and material properties of through vias and post bumps.
Innovation Solution
The semiconductor package design incorporates a bridge die with a reduced thickness, featuring through silicon vias (TSVs) and conductive post bumps, along with a dielectric mold layer to increase the distance between vias and reduce noise interference, and a redistribution line structure to connect the semiconductor die to the bridge die, enhancing signal integrity and heat radiation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If through vias and post bumps are used in limited space, then device density is improved, but noise interference increases
Solution Approach 1:
A dielectric layer is introduced as an intermediary material between adjacent through vias and between the post bump and through vias. This dielectric layer acts as a noise shield that blocks electromagnetic interference while allowing the compact via structure to remain. The intermediary dielectric material resolves the contradiction by enabling high density via placement while simultaneously reducing the noise interference that would otherwise increase with closer via spacing.
2Quantity of substance
If distance between vias is reduced to increase density, then device capacity is improved, but noise interference worsens
Solution Approach 1:
The dielectric layer serves as a noise-blocking intermediary that enables reduced via spacing. By placing this insulating material between adjacent vias, the design can achieve higher device capacity through increased via density while the dielectric intermediary prevents noise coupling between the closely-spaced vias, thus resolving the trade-off between capacity and noise.
Solution Approach 2:
The physical parameters of the via structure are optimized by controlling the spacing and introducing dielectric material with specific permittivity properties. By changing the electrical parameters through dielectric selection and via dimensional control, the system achieves high capacity via density while maintaining acceptable noise levels through parameter optimization.
3Length of moving object
If bridge die thickness is reduced, then package form factor is improved, but structural strength deteriorates
Solution Approach 1:
The bridge die structure employs composite material construction combining the semiconductor substrate with integrated reinforcement elements. This composite approach allows the bridge die to achieve reduced thickness for compact form factor while the composite structure provides enhanced mechanical strength to compensate for the reduced thickness, resolving the contradiction between size and strength.
Solution Approach 2:
Instead of relying solely on increased thickness for strength, the design introduces reinforcement elements that extend in lateral dimensions (another dimension). This dimensional approach allows the bridge die to maintain structural integrity through distributed reinforcement rather than increased thickness, achieving both reduced overall thickness and maintained strength.
Data Source
AI summary
A semiconductor package includes first and second semiconductor dies, first and second redistributed line structures, a first bridge die, and a vertical connector. The first semiconductor die and the first bridge die are disposed on the first redistributed line structure. The first bridge die is disposed to provide a level difference between the first semiconductor die and the first bridge die, the first bridge die having a height that is less than a height of the first semiconductor die. The second redistributed line structure has a protrusion, laterally protruding from a side surface of the first semiconductor die when viewed from a plan view, and a bottom surface of the second redistributed line structure is in contact with a top surface of the first semiconductor die. The second semiconductor die is disposed on the second redistributed line structure. The vertical connector is disposed between the bridge die and the protrusion of the second redistributed line structure to support the protrusion.