Bridge Die Selective Metallization for Multi-Die Signal Alignment
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Communicating large numbers of signals between multiple dies in multi-die IC packages is challenging due to increased transistor density and die disaggregation, leading to manufacturing complexity and alignment issues with embedded dies and power signal routing.
Innovation Solution
The use of double-sided embedded dies with through-silicon vias (TSVs) and a selective metallization process involving doped dielectric layers to improve alignment and routing of power signals, allowing for better positioning and alignment of conductive structures across the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If embedded dies are used to increase transistor density and die disaggregation, then signal communication capability between multiple dies is improved, but manufacturing complexity and alignment precision deteriorate
Solution Approach 1:
The substrate is divided into multiple regions with different dielectric materials: a first region with a first dielectric material and a second region with a second dielectric material having different etch selectivity. This segmentation allows independent processing and alignment of different conductive structure layers, reducing overall manufacturing complexity while maintaining high signal communication capability between dies.
Solution Approach 2:
Different regions of the substrate are assigned different dielectric materials optimized for specific functions: the first dielectric material in the first region facilitates power signal routing, while the second dielectric material in the second region enables precise alignment of conductive structures. This local optimization resolves the contradiction between versatility and manufacturing complexity.
2Adaptability or versatility
If embedded dies are used to increase transistor density and die disaggregation, then signal communication capability between multiple dies is improved, but alignment precision of conductive structures deteriorates
Solution Approach 1:
Conductive structures are formed in the first region before the dies are embedded in the cavity. This preliminary formation of conductive structures with the first dielectric material establishes a stable foundation for subsequent alignment operations, ensuring precise positioning of power signals and reducing alignment precision issues.
Solution Approach 2:
The use of different dielectric materials with distinct etch selectivity in different regions enables localized control over conductive structure formation and alignment. The second dielectric material in the second region is specifically optimized to facilitate precise alignment of conductive structures during the embedding process.
3Manufacturing precision
If selective metallization process with doped dielectric layers is used, then alignment of conductive structures is improved, but device complexity increases
Solution Approach 1:
Doped dielectric layers are applied selectively to specific regions where alignment is critical, rather than uniformly across the entire substrate. This localized application of doped dielectric materials provides the necessary alignment enhancement only where needed, minimizing the increase in device complexity.
Solution Approach 2:
The substrate is segmented into multiple regions with different dielectric properties, allowing the metallization process to be optimized for each region independently. This segmentation enables precise alignment of conductive structures in critical areas while maintaining simpler processing in other regions.
Data Source
AI summary
A microelectronic assembly includes a bridge die embedded in a substrate. The substrate includes a doped dielectric material in a layer or region directly below the bridge die, and in a layer near an upper face of the bridge die. A cavity is formed in the upper layer of the doped dielectric material for embedding the bridge die, exposing the lower layer of the doped dielectric material. After cavity formation, a selective metallization of the lower and upper layers of the doped dielectric material is performed, providing well-aligned metal layers in the region of the bridge die and the region around the bridge die.