Bridge Arm Transistor Drive Circuit With Isolated High-Voltage Regions

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Solution Overview

Problem

Current drive circuits for high-voltage bridge circuits face challenges in isolating bulk potentials of P-type semiconductor devices in different voltage domains, leading to interference between these devices.

Innovation Solution

The proposed drive circuit includes multiple high-voltage regions isolated by isolation rings, allowing P-type semiconductor devices in different voltage domains to have mutually isolated N wells and distinct bulk potentials, thereby avoiding interference.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If P-type semiconductor devices are disposed in different voltage domains within the high-voltage region, then the drive circuit can handle multiple voltage levels, but the bulk potentials of P-type semiconductor devices interfere with each other

Engineering Contradiction:

Improvemulti-voltage domain capabilityVSAvoidbulk potential interference

Core Design Contradiction:

Adaptability or versatilityVSObject-affected harmful factors

Solution Approach 1:

The high-voltage region is divided into multiple isolated high-voltage regions (first high-voltage region, second high-voltage region, etc.), each corresponding to a different voltage domain. P-type semiconductor devices in different voltage domains are placed in different isolated regions, preventing bulk potential interference while maintaining multi-voltage domain capability.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Isolation rings are introduced as intermediary structures between different high-voltage regions. These isolation rings electrically isolate the bulk potentials of P-type semiconductor devices in different voltage domains, allowing each device to operate independently at its required voltage level without interference.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Reliability

If independent N wells are created for P-type semiconductor devices in different voltage domains, then bulk potential isolation is achieved, but the manufacturing process becomes more complex

Engineering Contradiction:

Improvebulk potential isolationVSAvoidsemiconductor manufacturing process

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The semiconductor substrate is segmented into multiple isolated high-voltage regions using isolation rings. Each region can have its own independent N well structure for P-type semiconductor devices, achieving bulk potential isolation through spatial segmentation rather than requiring complex independent well formation processes for each device.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Isolation rings serve as intermediary structures that provide electrical isolation between different voltage domains. This allows independent N wells to be formed in each isolated region using standard manufacturing processes, achieving bulk potential isolation without requiring fundamentally new manufacturing techniques.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Device complexity

If a single high-voltage region is used, then the device structure is simpler, but P-type semiconductor devices in different voltage domains cannot be properly isolated

Engineering Contradiction:

Improveregion structureVSAvoiddevice isolation

Core Design Contradiction:

Device complexityVSReliability

Solution Approach 1:

The high-voltage region is segmented into multiple isolated sub-regions (first high-voltage region, second high-voltage region, etc.), each handling a different voltage domain. This segmentation provides the necessary isolation for reliable operation while maintaining a relatively simple overall structure that can be integrated into the bridge circuit architecture.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Isolation rings are introduced as intermediary structures between adjacent high-voltage regions. These rings provide the necessary electrical isolation to prevent bulk potential interference between P-type semiconductor devices in different voltage domains, ensuring reliable operation without requiring complex three-dimensional structures.

Inventive Principle:

Principle #24Intermediary (Mediator)

Data Source

PatentUS12273103B2Drive circuit of bridge arm switching transistor, drive circuit, and power converter

Publication Date: 2025.04.08 HUAWEI TECH CO LTD

AI summary

This application discloses a drive circuit of a bridge arm switching transistor, a drive circuit, and a power converter. The bridge arm switching transistor includes a first switching transistor and a second switching transistor. A first terminal of the first switching transistor is connected to a power supply, a second terminal of the first switching transistor is connected to a first terminal of the second switching transistor, and a second terminal of the second switching transistor is grounded. The drive circuit includes a low-voltage region and at least two high-voltage regions isolated which include a first high-voltage region and a second high-voltage region. A semiconductor device configured to drive the second switching transistor is disposed in the low-voltage region. P-type semiconductor devices are disposed in each of the first high-voltage region and the second high-voltage region, and the P-type semiconductor devices are configured to drive the first switching transistor.