Bridge Gate Electrode Structure for Scaled MOSFET Channels
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Solution Overview
Problem
The scale-down of metal-oxide-semiconductor field-effect transistors (MOS-FETs) in semiconductor devices leads to deterioration in operation characteristics, necessitating improvements in semiconductor device design to maintain high performance.
Innovation Solution
A semiconductor device with a specialized gate electrode structure featuring a bridge portion connecting channel overlap portions, which includes a first and second channel overlap portion and a bridge portion disposed at a higher level than the channel overlap portions, along with a bridge insulating layer and gate connection pattern, reducing the need for separate contact and conductive lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If MOS-FETs are scaled down to meet increasing demand for smaller pattern sizes, then device size is reduced, but operation characteristics deteriorate
Solution Approach 1:
The gate electrode is divided into multiple segments including a first channel overlap portion, a second channel overlap portion, and a bridge portion. This segmentation allows each part to be optimized independently for electrical performance while maintaining overall compactness, resolving the contradiction between small device size and good operation characteristics
Solution Approach 2:
The bridge portion is positioned at a higher level than the channel overlap portions, creating a three-dimensional structure. This vertical dimensionality change allows the gate electrode to maintain effective gate control for improved operation characteristics while occupying minimal planar area, thus achieving small device size
2Reliability
If separate contact and conductive lines are used in conventional designs, then electrical connections are established, but device size and fabrication cost increase
Solution Approach 1:
The gate electrode structure merges the functions of gate control and electrical connection by integrating the bridge portion that connects channel overlap portions. This eliminates the need for separate contact and conductive lines, reducing device complexity and fabrication cost while maintaining reliable electrical connections
Solution Approach 2:
The bridge portion of the gate electrode serves multiple functions: it provides mechanical support, establishes electrical connections between channel overlap portions, and acts as a conductive path. This multi-functionality reduces the number of separate components needed, simplifying the overall device structure
Data Source
AI summary
A semiconductor device includes a first source/drain structure and a second source/drain structure spaced apart from each other. A first channel structure is connected to the first source/drain structure. A second channel structure is connected to the second source/drain structure. A separation insulating layer is disposed between the first and second source/drain structures and between the first and second channel structures. A gate electrode overlaps the separation insulating layer, the first channel structure, and the second channel structure. The gate electrode includes a first channel overlap portion overlapping the first channel structure, a second channel overlap portion overlapping the second channel structure, and a bridge portion disposed between the first channel overlap portion and the second channel overlap portion.