Bridge Insulation Layer for Semiconductor Stress Relief
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Solution Overview
Problem
The existing semiconductor devices with CMIS structures face issues due to stress caused by thermal expansion, leading to crystal defects as the trench insulation and island-shaped insulation layers expand and contract independently, affecting the relative positional relationship and causing stress on the semiconductor layer.
Innovation Solution
A semiconductor device with a trench insulation layer, a field insulation layer, and a bridge insulation layer that connects them, maintaining a predetermined interval and reducing stress by regulating the relative positional relationship between these layers, thereby preventing crystal defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If trench insulation layer and field insulation layer are formed separately, then manufacturing process is simplified, but thermal expansion causes independent expansion and contraction leading to stress and crystal defects
Solution Approach 1:
The patent merges the trench insulation layer and field insulation layer into a single continuous insulation layer structure. The trench insulation layer extends continuously from the trench bottom to above the semiconductor layer, overlapping with the field insulation layer, creating a unified structure that moves as one unit during thermal expansion, thereby eliminating relative positional shifts and stress concentration that cause crystal defects.
Solution Approach 2:
The patent introduces a vertical dimension solution by extending the trench insulation layer height to overlap with the field insulation layer in the vertical direction. This three-dimensional configuration allows the insulation structures to be connected across different spatial levels, maintaining mechanical continuity while accommodating the planar layout requirements of the semiconductor device.
2Adaptability or versatility
If trench insulation layer and field insulation layer are positioned independently, then device layout flexibility is improved, but relative positional relationship becomes unstable due to thermal expansion
Solution Approach 1:
The patent combines the trench insulation layer and field insulation layer into a mechanically integrated structure through vertical overlap and continuous material extension. This merging ensures that both insulation functions are maintained while establishing a stable relative positional relationship, as the unified structure expands and contracts together during thermal cycles without developing internal stress.
3Temperature
If insulation layers expand and contract independently, then thermal management is improved, but stress on semiconductor layer increases causing crystal defects
Solution Approach 1:
The patent merges the insulation layers into a continuous structure that provides unified thermal management while eliminating stress. The continuous insulation layer allows uniform thermal expansion throughout the entire insulation system, preventing localized stress concentration at the interfaces between separate insulation layers, thereby protecting the semiconductor layer from thermally-induced crystal defects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively restrains stress on the semiconductor layer, preventing crystal defects and enhancing the device's reliability by maintaining a consistent positional relationship between the trench and field insulation layers.
Implementation Method 1
stress caused by thermal expansion, leading to crystal defects as the trench insulation and island-shaped insulation layers expand and contract independently
Data Source
AI summary
A semiconductor device includes a semiconductor layer that has a main surface including a defined region defined by a trench, a trench insulation layer formed in the trench, a field insulation layer that covers the defined region away from the trench, and a bridge insulation layer that is formed in a region between the trench and the field insulation layer in the defined region and that is connected to the trench insulation layer and to the field insulation layer.