Bridge-Based Microelectronic Structure for Dense Package Interconnects
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional microelectronic packages face limitations in interconnect density, signal transfer speed, and miniaturization due to the use of solder for attaching dies to organic package substrates.
Innovation Solution
The implementation of a microelectronic structure that includes a substrate with a bridge component in a cavity, allowing for higher interconnect density without the need for costly manufacturing operations like fine-pitch via formation and first-level interconnect plating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If solder is used to attach dies to organic package substrates, then the package can be manufactured with conventional processes, but the interconnect density is limited and miniaturization is restricted
Solution Approach 1:
The patent transitions from planar interconnect architecture to three-dimensional vertical interconnect architecture using through-silicon vias (TSVs). This dimensional change allows signals to travel vertically through the substrate rather than laterally across the surface, enabling higher interconnect density and miniaturization while maintaining manufacturability through established via formation and plating processes
Solution Approach 2:
The patent implements nested interconnect structures where multiple interconnect levels are stacked vertically within the substrate thickness. Through-silicon vias are nested within the substrate, and additional vias are nested within the vias, creating a multi-layer vertical interconnect hierarchy that achieves high interconnect density without increasing the lateral footprint
2Ease of manufacture
If conventional solder-based die attachment is used, then manufacturing is simpler, but signal transfer speed is limited
Solution Approach 1:
The patent replaces the mechanical solder joint attachment system with a direct bonded semiconductor-to-semiconductor interface using through-silicon vias. This substitution eliminates the mechanical solder interface that limits signal speed, enabling direct electrical contact between dies and substrate with faster signal transfer while maintaining manufacturing simplicity through standard semiconductor fabrication processes
3Manufacturing precision
If fine-pitch via formation and first-level interconnect plating are used to achieve high interconnect density, then interconnect density improves, but manufacturing cost increases
Solution Approach 1:
The patent achieves high interconnect density by transitioning to vertical through-silicon vias rather than lateral fine-pitch surface vias. This dimensional change allows the use of standard via formation and plating processes at relaxed pitch requirements, achieving high effective interconnect density without the costly fine-pitch manufacturing operations
Data Source
AI summary
Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.