Bridge Circuit Package Layout for Two-Sided MOSFET Cooling
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Solution Overview
Problem
Existing packaged power electronic devices with high voltage and rapid switching capabilities face challenges in thermal dissipation and size optimization, particularly for large MOSFET transistors, where traditional downward dissipation methods are insufficient and lead to increased device size and potential thermal issues.
Innovation Solution
A packaged electronic device with a DBC multilayer leadframe configuration allowing upward cooling, where MOSFET transistors are arranged on two overlapping levels with drain metallizations facing differently, and a thermally conductive structure is integrated to facilitate heat dissipation from both sides, optimizing thermal conduction paths and reducing device size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional downward dissipation method is used, then device structure is simple, but thermal dissipation capacity is insufficient for high-power MOSFET transistors
Solution Approach 1:
The patent transitions from single-direction (downward) thermal dissipation to multi-directional (upward and downward) dissipation by arranging MOSFET transistors on two overlapping levels with drain metallizations facing different directions. This dimensional change in heat dissipation pathways significantly enhances thermal management capacity without proportionally increasing structural complexity.
2Volume of moving object
If device size is reduced for compactness, then integration density improves, but thermal dissipation becomes more difficult
Solution Approach 1:
The patent employs a nested arrangement where MOSFET transistors are positioned on two overlapping levels within a compact footprint. The first and second MOSFET transistors are nested vertically with their drain metallizations facing opposite directions, allowing heat to dissipate through multiple surfaces. This nesting strategy achieves both compact device size and enhanced thermal dissipation by utilizing three-dimensional space efficiently.
3Temperature
If MOSFET transistors are arranged on two overlapping levels, then thermal dissipation paths are optimized, but manufacturing complexity increases
Solution Approach 1:
The patent segments the device into distinct functional layers: a first level with first MOSFET transistors having drain metallizations facing upward, and a second level with second MOSFET transistors having drain metallizations facing downward. This segmentation allows independent optimization of thermal pathways for each level while maintaining a systematic assembly process. The modular segmented structure facilitates manufacturing by breaking down the complex multi-level assembly into manageable stages.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides enhanced thermal dissipation capacity and compactness by allowing heat transfer from both sides of the device, addressing the limitations of traditional downward dissipation methods and ensuring efficient cooling for high-power MOSFET transistors.
Implementation Method 1
a thermally conductive structure is integrated to facilitate heat dissipation from both sides, optimizing thermal conduction paths
Data Source
AI summary
The device has a first support element forming a first thermal dissipation surface and carrying a first power component; a second support element forming a second thermal dissipation surface and carrying a second power component, a first contacting element superimposed to the first power component; a second contacting element superimposed to the second power component; a plurality of leads electrically coupled with the power components through the first and/or the second support elements; and a thermally conductive body arranged between the first and the second contacting elements. The first and the second support elements and the first and the second contacting elements are formed by electrically insulating and thermally conductive multilayers.