Bridged Local Interconnects in Semiconductor Structures
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Solution Overview
Problem
In semiconductor device fabrication, it is challenging to electrically connect semiconductor components that are closely located or separated by other components due to layout constraints.
Innovation Solution
A semiconductor structure is formed with a substrate, dielectric layer, gate structures, a hard mask covering the gate structures, and a contact structure that crosses over the hard mask, allowing for electrical contact to one gate structure and isolation from adjacent devices, enabling bridged local interconnects that can be applied in various circuit layouts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If traditional interconnection methods are used to connect closely located or separated semiconductor components, then electrical connection can be achieved, but the layout flexibility is reduced and manufacturing complexity increases
Solution Approach 1:
The contact structure extends vertically through the dielectric layer to create a bridged local interconnect that crosses over adjacent devices. This three-dimensional approach allows electrical connection between components that are separated in the planar layout, providing layout flexibility without increasing manufacturing complexity
Solution Approach 2:
The contact structure is divided into multiple contact regions (first contact region contacting the gate structure, second contact region contacting the substrate) separated by the hard mask. This segmentation allows the interconnect to selectively contact different components while maintaining electrical continuity through the bridged structure
2Adaptability or versatility
If a contact structure crosses over adjacent devices to connect separated components, then layout versatility is improved, but electrical isolation from unwanted adjacent devices becomes challenging
Solution Approach 1:
The hard mask serves as an intermediary layer between the contact structure and adjacent devices. It provides electrical isolation by being disposed between the contact structure and the adjacent device, allowing the contact structure to cross over the adjacent device while preventing unwanted electrical connection
Solution Approach 2:
The hard mask is selectively positioned only where needed for isolation - between certain contact regions and specific adjacent devices. This localized application provides electrical isolation precisely where required while maintaining circuit connectivity where needed, achieving both layout versatility and reliable isolation
Data Source
AI summary
The present invention provides a semiconductor structure, includes a substrate, a dielectric layer disposed on the substrate, a first gate structure and a second gate structure disposed in the dielectric layer, a hard mask disposed in the dielectric layer, where the hard mask covers a sidewall of the first gate structure, and covers the second gate structure, and a contact structure disposed in the dielectric layer. The contact structure at least crosses over the hard mask. The contact structure includes a first contact portion and a second contact portion. The first contact portion contacts the first gate structure directly, the second contact portion contacts the substrate directly, and the hard mask is disposed between the first contact portion and the second contact portion.