Bridging Contact Structure for GAA Gate and S/D Integration
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Solution Overview
Problem
The integration of multi-gate devices in semiconductor manufacturing is challenging due to complexity and the need for improved gate control and reduced short-channel effects.
Innovation Solution
A semiconductor structure is fabricated using a gate-all-around (GAA) transistor design, where the gate structures are formed directly on the gate structure without a cap layer, and a bridging contact structure is created to connect the source/drain and gate contacts, enhancing the quality of the gate contact and facilitating better integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-gate devices are integrated to improve gate control and reduce short-channel effects, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The fabrication process is divided into distinct modular stages: forming gate structures around nanosheets, creating source/drain regions, forming dielectric layers, and creating contact structures. Each stage builds upon the previous one, making the complex multi-gate device fabrication manageable through systematic segmentation of the manufacturing process.
Solution Approach 2:
The gate structure completely surrounds the channel region in a nested configuration, with the gate electrode wrapping around the nanosheet channel from all sides. This nested gate-all-around architecture provides superior gate control over the channel while maintaining a systematic fabrication approach that addresses the manufacturing complexity challenge.
2Productivity
If device dimensions are scaled down to improve production efficiency and lower costs, then productivity is improved, but manufacturing complexity increases
Solution Approach 1:
Dielectric layers are formed over the gate structures and source/drain regions before contact structures are created. This preliminary formation of dielectric layers simplifies subsequent processing by providing a prepared substrate for contact formation, enabling efficient scaling while managing manufacturing complexity through advance preparation of structural elements.
Data Source
AI summary
Semiconductor structures and methods for manufacturing the same are provided. The method includes a gate structure formed over a substrate, and a source/drain (S/D) structure formed adjacent to the gate structure. The semiconductor structure includes a dielectric layer formed over the S/D structure, and an S/D contact structure formed over the S/D structure. The S/D contact structure is through the dielectric layer. The semiconductor structure includes a gate contact structure formed through the dielectric layer and landing on the gate structure, and the gate contact structure is in direct contact with the gate structure. The semiconductor structure includes a bridging contact structure covering the gate contact structure and the S/D contact structure, and the bottommost surface of the bridging contact structure is in direct contact with the topmost surface of the S/D contact structure.