3D Nanostructure Imaging via Broad Ion Beam Segmentation

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Solution Overview

Problem

Existing 3D imaging instruments face challenges with slow etching, low precision, and inability to perform large-volume etching across scales, limiting their effectiveness in imaging nanostructures and irregular 3D spaces such as micro-nano porous networks and shale gas reservoirs.

Innovation Solution

A 3D imaging system comprising a master control center, vacuum chamber, electron gun, broad ion beam source, and laser rangefinder components, which enables precise etching and imaging by controlling sample movement and etching thickness, expanding the imaging area to the square millimeter level with high resolution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a focused ion beam is used to etch a sample layer by layer with high precision, then the etching precision is improved to several nanometers, but the etching speed becomes extremely slow and the imaging time extends to weeks

Engineering Contradiction:
Improveetching precisionVSAvoidetching speed
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent divides the etching process into two distinct stages: a broad ion beam source performs rapid bulk removal of material to expose the region of interest, followed by a focused ion beam for high-precision nanometer-level etching. This segmentation allows each beam type to optimize for its specific function, resolving the contradiction between speed and precision.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces a spatial dimension solution by using a broad ion beam to rapidly expose the region of interest from a large area, then concentrating the focused ion beam on the specific nanometer-scale region. This dimensional approach allows rapid bulk processing followed by precise localized etching, simultaneously achieving high speed and high precision.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Manufacturing precision

If the focused ion beam is focused to tens to several nanometers to achieve high etching precision, then the etching accuracy is improved, but the beam cannot complete large volume etching across scales

Engineering Contradiction:
Improveetching accuracyVSAvoidetching volume
Core Design Contradiction:
Manufacturing precisionVSVolume of moving object

Solution Approach 1:

The patent segments the etching task by volume scale: the broad ion beam handles large-volume rapid removal, while the focused ion beam handles small-volume high-precision work. This division allows the system to effectively process both large and small scales without compromise.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent solves the scale problem by introducing a spatial dimension strategy: first using the broad beam to rapidly expose the region of interest from a large area (macro scale), then using the focused beam on the specific nanometer-scale region (micro scale). This dimensional approach enables effective processing across multiple scales.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Productivity

If laser ablation is used to rapidly expose the region of interest, then the exposure speed is improved, but the ablation precision is only at micron level causing rough surface imaging

Engineering Contradiction:
Improveexposure speedVSAvoidablation precision
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent uses the broad ion beam as an intermediary tool between laser ablation and focused ion beam etching. The broad ion beam performs rapid material removal with better precision than laser ablation, exposing the region of interest without the micron-level roughness caused by laser, then the focused ion beam performs the final high-precision nanometer-level etching.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The system significantly increases the 3D imaging volume by at least six orders of magnitude, meeting research needs for irregular 3D spaces while reducing the cost of 3D imaging devices.

Implementation Method 1

The electron gun is arranged above the vacuum chamber, and is configured to bombard a surface of the sample to excite a plurality of electronic signals

Methodology Applied
Scientific EffectElectron bombardment: Electron Beam

Implementation Method 2

The broad ion beam source device is configured to etch the sample

Methodology Applied
Scientific EffectIon beam etching: Ion Beam

Implementation Method 3

The laser rangefinder component includes a first laser rangefinder and a second laser rangefinder, the first laser rangefinder is configured to measure a distance from a top surface of an ion beam shielding plate

Methodology Applied
Scientific EffectLaser ranging: LIDAR

Data Source

PatentUS11488801B1Three-dimensional (3D) imaging system and method for nanostructure
Publication Date: 2022.11.01 INSTITUTE OF GEOLOGY AND GEOPHYSICS CHINESE ACADEMY OF SCIENCES
  • US11488801B1 patent drawing
  • US11488801B1 patent drawing
  • US11488801B1 patent drawing

AI summary

A 3D imaging system and method for a nanostructure is provided. The 3D imaging system includes a master control center, a vacuum chamber, an electron gun, an imaging signal detector, a broad ion beam source device, and a laser rangefinder component. A sample loading device is arranged inside the vacuum chamber. A radial source of the broad ion beam source device is arranged in parallel with an etched surface of a sample. The laser rangefinder component includes a first laser rangefinder configured to measure a distance from a top surface of an ion beam shielding plate and a second laser rangefinder configured to measure a distance from a non-etched area of the sample, the first laser rangefinder and the second laser rangefinder are arranged side by side, and a laser traveling direction is perpendicular to a traveling direction of the broad ion beam source device.