Perforating Two-Dimensional Materials Using Broad Ion Fields
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Solution Overview
Problem
Current methods for perforating two-dimensional materials like graphene struggle to produce holes with a high density and narrow size distribution, particularly in the 0.3 nm to 10 nm range, which is crucial for filtration applications, due to limitations in controlling hole nucleation and growth, and are not scalable for large areas.
Innovation Solution
A process involving exposure of a composite material with a two-dimensional material and another layer to a broad ion source, where ions interact with both materials to introduce defects that expand into holes, allowing for controlled hole formation with a broad ion field, separating and concerting nucleation and growth stages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If chemical techniques (ozone or plasma exposure) are used to create holes in two-dimensional materials, then holes can be formed, but the hole density and size distribution are broad and difficult to control
Solution Approach 1:
The patent changes the fundamental parameter of hole formation from chemical reactions to physical ion bombardment. By controlling ion energy (0.1-10 keV) and ion flux, the process achieves precise control over hole size distribution while maintaining high hole density, resolving the contradiction between manufacturing precision and quantity of holes formed
Solution Approach 2:
The patent replaces chemical mechanisms (ozone oxidation, plasma reactions) with a physical mechanism (ion beam bombardment). This substitution allows for better control of hole formation parameters through physical quantities (ion energy, ion flux) rather than chemical reaction conditions, thereby achieving both high hole density and narrow size distribution
2Quantity of substance
If conventional perforation processes are used, then some holes can be formed, but it is difficult to achieve high hole density with narrow size distribution simultaneously
Solution Approach 1:
The patent implements feedback control by monitoring hole formation in real-time during ion beam irradiation and adjusting ion flux and energy accordingly. This allows the process to maintain both high hole density and narrow size distribution by dynamically optimizing parameters based on observed hole growth and nucleation rates
Solution Approach 2:
The patent employs dynamic control of ion beam parameters (energy, flux, irradiation time) to optimize hole formation. By dynamically adjusting these parameters during the process, the system can achieve high hole density while maintaining narrow size distribution, as the process can adapt to prevent both under-perforation and over-perforation
3Manufacturing precision
If focused ion beams are used for perforation, then holes can be formed with good control, but the process is not scalable for large areas due to small beam size and high energy requirements
Solution Approach 1:
The patent segments the ion beam into multiple parallel beams or uses a scanned ion beam that covers large areas. This segmentation approach maintains the precision of ion-beam-formed holes while achieving scalability by distributing the ion flux across multiple zones or by rapidly scanning a controlled ion beam across the entire target area
Solution Approach 2:
The patent creates a universal ion beam perforation process that can handle both small precise holes and large area perforation. By optimizing ion energy and flux parameters, the same process conditions can be applied across different area scales, making the process universally applicable from laboratory samples to industrial-scale production
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process achieves a high density of holes with a narrow size distribution, making it suitable for filtration applications and scalable for large areas, enhancing the performance and commercial viability of perforated two-dimensional materials.
Implementation Method 1
exposure of a composite of a layer including the two-dimensional material and a layer of another material to a source of ions produces a plurality of holes in the two-dimensional material
Implementation Method 2
interacting a plurality of ions from the ion source with the two-dimensional material and with the layer to introduce a plurality of defects in the two-dimensional material
Data Source
AI summary
Perforating graphene and other two-dimensional materials with holes inclusively having a desired size range, a narrow size distribution, and a high hole density can be difficult to achieve. A layer in continuous contact with graphene, graphene-based materials and other two-dimensional materials can help promote hole formation. Processes for perforating a two-dimensional material can include exposing to an ion source a two-dimensional material in continuous contact with at least one layer, and interacting a plurality of ions from the ion source with the two-dimensional material and with the at least one layer. The ion source may be a broad ion beam.