Bromine Etching Liquid for Gallium Oxide Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Gallium oxide is difficult to etch using existing methods, particularly with etching liquids like hydrogen fluoride or mist etching, which are insufficient for achieving nano-level control necessary in semiconductor device manufacturing.
Innovation Solution
A method involving an etching liquid containing bromine, specifically hydrobromic acid, is used at temperatures higher than 200°C, with atomized droplets to effectively etch gallium oxide and aluminum-containing materials, allowing for precise control and surface modification.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching liquids (hydrogen fluoride) or mist etching are used, then etching process can be performed, but etching of gallium oxide is insufficient and nano-level control is difficult to achieve
Solution Approach 1:
The patent changes the chemical composition parameter of the etching liquid from conventional hydrogen fluoride or generic mist to a specific composition containing bromine (4-40 wt%), and changes the temperature parameter to 200°C or higher. This combination of parameter changes enables effective etching of gallium oxide while achieving nano-level control precision required for semiconductor manufacturing.
2Ease of operation
If etching liquid is sprayed as micro-mist with small particle size, then coating gaps can be addressed, but etching amount is insufficient for gallium oxide
Solution Approach 1:
The patent modifies the chemical composition parameter by incorporating bromine (4-40 wt%) in the etching liquid, which dramatically increases the etching capability on gallium oxide. This compositional change enables sufficient etching amount to be achieved while maintaining the mist spray method for good gap coverage.
3Ease of manufacture
If existing etching methods are used on gallium oxide, then process can be performed, but scratch-like defects occur and surface smoothness is poor
Solution Approach 1:
The patent changes the chemical composition to include bromine (4-40 wt%) and sets the temperature to 200°C or higher, which modifies the etching mechanism to produce cleaner removal of gallium oxide without creating scratch-like defects. This results in improved surface smoothness while maintaining process feasibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables efficient etching of gallium oxide with reduced scratch-like defects and improved surface smoothness, capable of forming trenches and achieving significant etching depths, suitable for semiconductor device manufacturing.
Implementation Method 1
etching an object comprising at least gallium and/or aluminum with an etching liquid comprising bromine
Data Source
AI summary
In a first aspect of a present inventive subject matter, a method of etching an object to be etched with an etching liquid that contains bromine, and the object contains at least gallium and/or aluminum.