Brush Polymer Self-Aligned Patterning for Semiconductor Devices
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Solution Overview
Problem
Current photolithography methods face challenges in forming fine and minute patterns due to resolution limits, leading to the complexity and cost of double patterning techniques.
Innovation Solution
The method involves forming a brush layer on a substrate using brush polymers with hydrophobic and hydrophilic units, followed by a self-aligned layer using block copolymers, which are thermally cured to create aligned blocks that can be transferred to the object layer, enabling the formation of precise patterns without the need for multiple masks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography with exposure device is used to form fine patterns, then pattern formation capability is improved, but resolution limit prevents formation of patterns below specific critical dimension
Solution Approach 1:
The patent divides the pattern formation process into multiple stages using guide patterns and self-aligned layers. The block copolymer system segments into distinct domains (first blocks and second blocks) that automatically align around guide patterns, enabling sub-resolution patterning without direct exposure of the final pattern geometry.
Solution Approach 2:
Guide patterns serve as intermediary structures that mediate between the exposure device and the final pattern. The brush layer and self-aligned layer act as intermediate materials that transfer and refine the pattern information, allowing formation of finer features than the exposure resolution would normally permit.
2Manufacturing precision
If double patterning method is used to overcome resolution limit, then fine patterns can be formed, but process complexity and manufacturing cost increase
Solution Approach 1:
The patent combines multiple functions into a single self-aligned layer formation step. The block copolymer system simultaneously performs pattern multiplication, self-alignment, and domain separation in one process, eliminating the need for separate mask alignment and multiple exposure steps required by traditional double patterning.
Solution Approach 2:
The block copolymer system performs self-alignment and self-organization around the guide patterns without requiring external alignment machinery or complex process control. The thermodynamic drive for micelle formation and phase separation automatically positions the first blocks around guide patterns and arranges second blocks in between, creating fine patterns through self-organized behavior.
3Manufacturing precision
If double patterning method is used to achieve fine patterns, then resolution is improved, but manufacturing cost increases
Solution Approach 1:
The guide patterns serve as disposable sacrificial structures that are eventually removed after transferring the pattern information to the self-aligned layer. This allows use of simpler, lower-cost exposure processes for forming the guide patterns, while the expensive fine pattern formation occurs through the self-organizing block copolymer system rather than through expensive multi-step lithography.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the formation of fine patterns with high reliability and precision, reducing the complexity and cost associated with traditional double patterning methods while maintaining mechanical and chemical stability.
Implementation Method 1
the brush polymer including at least one of a first brush polymer or a second brush polymer, the first brush polymer including a hydrophobic repeating unit and a hydrophilic terminal group having at least two hydroxyl groups
Implementation Method 2
forming a self-aligned layer using a block copolymer on the brush layer to form blocks aligned around the guide patterns
Implementation Method 3
the first polymer unit being assembled into first blocks arranged in a grid shape or a honeycomb shape around the guide patterns, the second polymer unit being assembled into second blocks contacting the brush layer
Implementation Method 4
the hydrophilic terminal group having at least two hydroxyl groups
Data Source
AI summary
In a method of forming patterns, an object layer is formed on a substrate. Guide patterns are formed on the object layer. A brush layer is formed using a brush polymer on surfaces of the guide patterns. The brush polymer includes at least one of a first brush polymer and a second brush polymer. The first brush polymer includes a hydrophobic repeating unit and a hydrophilic terminal group having at least two hydroxyl groups. The second brush polymer includes a hydrophobic repeating unit and a hydrophilic random repeating unit having a hydroxyl group. A self-aligned layer is formed using a block copolymer on the brush layer to form blocks aligned around the guide patterns. At least a portion of the blocks is transferred to the object layer.