Back-Side Illuminated Imaging Device Capacitive Element Layout

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Solution Overview

Problem

The existing imaging device structure with inter-line capacitance in the wiring layer limits the degree of freedom in wiring layout, restricting the design and performance of capacitive elements.

Innovation Solution

A back-side illuminated imaging device is designed with a capacitive element comprising a first and second metal electrode, where the second metal electrode is positioned closer to the substrate than the contact plug, allowing it to overlap the photoelectric conversion region, thereby increasing layout flexibility and reducing parasitic capacitance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a capacitive element is formed on a substrate, then the capacitance of the floating diffusion can be dynamically changed, but the size of the photoelectric conversion region is reduced

Engineering Contradiction:
Improvedynamic rangeVSAvoidphotoelectric conversion region
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The capacitive element is moved from the substrate plane to the wiring layer above it, utilizing the third dimension (vertical space) to accommodate the capacitor without encroaching on the photoelectric conversion region area. This dimensional transition allows the capacitor to be formed in the wiring layer rather than competing for substrate space.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The capacitive element is nested within the wiring layer structure, specifically utilizing the space between wiring layers and around contact plugs. The capacitor is embedded in the interconnect structure rather than occupying separate substrate area, effectively nesting it within the existing device architecture.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Area of stationary object

If a wiring layer is provided with an inter-line capacitance, then the capacitance can be formed without substrate space, but the degree of freedom of wiring layout is limited

Engineering Contradiction:
Improvephotoelectric conversion regionVSAvoidwiring layout freedom
Core Design Contradiction:
Area of stationary objectVSAdaptability or versatility

Solution Approach 1:

The capacitive element is positioned at specific locations where it overlaps with contact plugs and photoelectric conversion regions, creating localized capacitance functionality. This local placement strategy allows the capacitor to be integrated at strategic points without constraining the overall wiring layout, as capacitors are only needed at specific nodes rather than throughout the entire wiring structure.

Inventive Principle:
Principle #3Local quality

3Adaptability or versatility

If the second metal electrode is positioned closer to the substrate than the contact plug, then layout flexibility is increased, but parasitic capacitance may increase

Engineering Contradiction:
Improvelayout flexibilityVSAvoidparasitic capacitance
Core Design Contradiction:
Adaptability or versatilityVSObject-generated harmful factors

Solution Approach 1:

The position of the second metal electrode is optimized by placing it closer to the substrate than the contact plug, which changes the geometric parameters of the capacitive element. This parameter adjustment increases the overlap area with the photoelectric conversion region, thereby increasing the useful capacitance value while the design manages parasitic effects through careful positioning.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances the degree of freedom in wiring layout, allows for the formation of capacitive elements with larger capacitance without layout constraints, and reduces unnecessary capacitance, improving the imaging device's performance, especially at low illumination intensities.

Implementation Method 1

a substrate including a photoelectric conversion region

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

a capacitive element connected to a floating diffusion via a switch element. In this imaging device, the capacitance of the floating diffusion can be dynamically changed

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS11271022B2Imaging device, method of manufacturing the same, and camera
Publication Date: 2022.03.08 CANON KK
  • US11271022B2 patent drawing
  • US11271022B2 patent drawing
  • US11271022B2 patent drawing

AI summary

A back-side illuminated imaging device includes a substrate including a photoelectric conversion region, a contact plug connecting a wiring layer and the substrate, and a capacitive element including a first metal electrode and a second metal electrode disposed between the first metal electrode and the substrate. A distance between the second metal electrode and the substrate is shorter than a length of the contact plug. The second metal electrode overlaps at least a part of the photoelectric conversion region in a planar view with respect to a main surface of the substrate.