BSI Image Sensor Stress-Adjusting Layers to Prevent Cracks

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Solution Overview

Problem

Backside illuminated (BSI) image sensors face reliability issues due to residual stress buildup in the stack of layers, leading to cracks and peeling, which compromises device performance.

Innovation Solution

Incorporating stress adjusting layers within the pixel region and other areas of BSI image sensors to counteract residual stress, using materials like silicon-rich oxide layers with specific silicon-to-oxygen ratios and graded profiles to induce compressive or tensile stress, thereby relaxing residual stress and preventing cracks and peeling.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple layers are stacked in BSI image sensors to enhance functionality, then device performance is improved, but residual stress buildup increases causing cracks and peeling

Engineering Contradiction:
Improvedevice functionalityVSAvoiddevice reliability
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

A stress adjusting layer is introduced as an intermediary between the substrate and the stack of layers. This layer acts as a mediator to counteract residual stress buildup, preventing cracks and peeling while allowing the multi-layer structure to maintain its enhanced functionality. The stress adjusting layer includes a first portion and a second portion with different stress characteristics to manage stress in different regions of the device.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The stress adjusting layer utilizes changes in material composition and structure to alter stress parameters. By controlling the silicon-to-oxygen ratio and creating graded profiles in the stress adjusting layer, the device can adjust stress characteristics to counteract residual stress from the stacked layers, maintaining reliability while preserving functionality.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If stress adjusting layers are added to counteract residual stress, then device reliability is improved, but device complexity increases

Engineering Contradiction:
Improvedevice reliabilityVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The stress adjusting layer is segmented into a first portion and a second portion, each positioned at different locations relative to the pixel region. This segmentation allows stress management to be targeted specifically where needed, rather than requiring a uniform complex structure across the entire device. The first portion is positioned closer to the pixel region while the second portion is positioned farther away, enabling localized stress control.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of stress adjusting layers increases device reliability by 40% to 50% by effectively managing stress within the sensor stack, enhancing the structural integrity and performance of BSI image sensors.

Implementation Method 1

The stress adjusting layer is configured to induce stress to counteract the residual stress within the stack of layers

Methodology Applied
Scientific EffectStress:

Data Source

PatentUS11769780B2Image sensors with stress adjusting layers
Publication Date: 2023.09.26 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11769780B2 patent drawing
  • US11769780B2 patent drawing
  • US11769780B2 patent drawing

AI summary

An image sensor with stress adjusting layers and a method of fabrication the image sensor are disclosed. The image sensor includes a substrate with a front side surface and a back side surface opposite to the front side surface, an anti-reflective coating (ARC) layer disposed on the back side surface of the substrate, a dielectric layer disposed on the ARC layer, a metal layer disposed on the dielectric layer, and a stress adjusting layer disposed on the metal layer. The stress adjusting layer includes a silicon-rich oxide layer. The concentration profiles of silicon and oxygen atoms in the stress adjusting layer are non-overlapping and different from each other. The image sensor further includes oxide grid structure disposed on the stress adjusting layer.