Barium Titanate Cladding for Diamond Waveguide Defect Control

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Solution Overview

Problem

There is a need for ancillary materials and components that can be integrated with quantum transistors for optical coupling and control, particularly for devices based on diamond crystal defects, where ferroelectric perovskites like barium titanate (BTO) are attractive due to their electro-optic and piezoelectric properties, which can tune the refractive index and strain in diamond waveguides, enhancing quantum computing devices.

Innovation Solution

The integration of barium titanate (BTO) with diamond waveguides containing crystal defects, where BTO is used as a cladding or waveguide to modulate the properties of diamond waveguides through electro-optic or piezoelectric effects, allowing for tuning of resonant frequencies and wavelengths, and creating a two-dimensional hole gas by applying voltages, thereby controlling the state of crystal defects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If ferroelectric perovskites like barium titanate (BTO) are integrated with diamond waveguides to tune refractive index and strain, then quantum efficiency and control capabilities are enhanced, but device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improvequantum efficiencyVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent integrates barium titanate (BTO) ferroelectric perovskite with diamond waveguides to create a composite structure. The BTO layer is deposited on the diamond waveguide surface, forming a multi-material system that combines the optical properties of diamond with the electro-optic and piezoelectric properties of BTO, enabling enhanced quantum efficiency through refractive index tuning and strain control

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent utilizes the electro-optic and piezoelectric effects of BTO to dynamically change physical parameters of the diamond waveguide. By applying electric fields or mechanical stress to the BTO layer, the refractive index and strain state of the diamond waveguide are tuned, allowing control over resonant frequencies and wavelengths of crystal defects

Inventive Principle:
Principle #35Parameter changes

2Adaptability or versatility

If BTO is used to modulate diamond waveguide properties through electro-optic or piezoelectric effects, then tuning capability of resonant frequencies is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improvetuning capabilityVSAvoidmanufacturing precision
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent implements dynamic tuning capability by incorporating BTO material that can be electrically or mechanically actuated. The BTO layer enables real-time modulation of the diamond waveguide properties, allowing the resonant frequencies to be tuned dynamically rather than being fixed during manufacturing, thus improving adaptability

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent exploits the electro-optic and piezoelectric properties of BTO to change physical parameters (refractive index, strain) after manufacturing. This allows post-fabrication tuning of resonant frequencies by applying external electric fields or mechanical stress, reducing the need for extremely tight manufacturing tolerances

Inventive Principle:
Principle #35Parameter changes

3Ease of operation

If surface carrier donor material is deposited over doped layers in proximity to crystal defect, then control over crystal defect state is improved, but device fabrication complexity increases

Engineering Contradiction:
Improvecontrol over crystal defect stateVSAvoidfabrication complexity
Core Design Contradiction:
Ease of operationVSEase of manufacture

Solution Approach 1:

The patent structures the device with distinct functional layers: doped layers in the diamond substrate, followed by surface carrier donor material deposited on top. This segmentation separates the charge control function (donor material) from the structural substrate (diamond), enabling independent optimization and simplified fabrication processes for each layer

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The surface carrier donor material acts as an intermediary layer between external control electrodes and the crystal defect. This intermediate layer facilitates charge transfer and enables electrical control of the crystal defect state without requiring direct contact between electrodes and the defect, simplifying the fabrication process

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This integration enhances the quantum efficiency and control of quantum computing devices by effectively tuning the resonant frequencies and wavelengths of diamond waveguides, enabling stable and versatile solid-state qubits with improved optical coupling and control capabilities.

Implementation Method 1

ferroelectric perovskites like barium titanate (BTO) are attractive due to their electro-optic and piezoelectric properties, which can tune the refractive index and strain in diamond waveguides

Methodology Applied
Scientific EffectElectro-optic effect: Electro-Optic Effects

Implementation Method 2

ferroelectric perovskites like barium titanate (BTO) are attractive due to their electro-optic and piezoelectric properties, which can tune the refractive index and strain in diamond waveguides

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 3

application of the voltage causes the BTO to create a two-dimensional hole gas over the crystal defect

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS20240319524A1Controlling the charge state of a crystal defect
Publication Date: 2024.09.26 QUANTUM TRANSISTORS TECH LTD
  • US20240319524A1 patent drawing
  • US20240319524A1 patent drawing
  • US20240319524A1 patent drawing

AI summary

A quantum computing device includes a crystalline material comprising a crystal defect and one or more doped layers in the crystalline material over the crystal defect in proximity to the crystal defect. A surface carrier donor material is disposed on a surface of the crystalline material over the one or more doped layers in proximity to the crystal defect. An electrode is disposed over the surface carrier donor material in proximity to the crystal defect. Control circuitry is configured to apply a voltage to the electrode to control a state of the crystal defect.