Bubble-Controlled Substrate Bath Flow for Uniform Etch Rates
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Solution Overview
Problem
In semiconductor manufacturing, batch-type substrate treating apparatuses experience uneven chemical solution distribution due to lack of resistance, leading to increased etching rates in central areas and unfavorable flow patterns.
Innovation Solution
A substrate treating apparatus with a treating bath, a treating solution source, and a bubble generation module that injects gas to create bubbles, along with a flow direction control module to manage bubble movement and size, ensuring uniform solution distribution and controlled etch rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If chemical solution is used for substrate treatment without resistance control, then treatment process can be performed, but flow rate becomes faster in center area causing increased etching and unfavorable flow distribution
Solution Approach 1:
Gas bubbles are introduced as an intermediary substance to modify the flow characteristics of the chemical solution. The bubbles create resistance and alter flow patterns, preventing excessive flow velocity in the center area while improving overall flow distribution uniformity across the substrate surface.
Solution Approach 2:
The physical state of the treating medium is changed by introducing gas bubbles into the liquid chemical solution, creating a two-phase flow system. This parameter change modifies the flow resistance and velocity distribution, enabling better control over etching uniformity without changing the chemical composition.
2Manufacturing precision
If gas bubbles are generated in treating solution, then flow distribution is improved, but device complexity increases due to additional bubble generation and control modules
Solution Approach 1:
The bubble generation module serves multiple functions: it creates flow resistance to control velocity distribution, enhances mixing of the chemical solution, and can facilitate heat transfer. This multi-functionality reduces the need for separate components, thereby limiting the increase in device complexity.
Solution Approach 2:
The system utilizes the natural behavior of gas bubbles in liquid (buoyancy, expansion, and movement) to achieve flow control without requiring complex active control mechanisms. The bubbles self-regulate flow patterns through their interaction with the chemical solution, reducing the need for additional control systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves etch rate uniformity by regulating bubble generation and flow direction, enhancing the dispersion of the treating solution and reducing etch rate deviations across substrates.
Implementation Method 1
a bubble generation module connected to the treating bath and generating bubbles in the substrate treating solution by injecting gas
Implementation Method 2
a size of the bubbles is controlled based on shear stress and a size of a hole, which is formed to penetrate the treating bath to provide the gas into the treating bath, and the shear stress is related to a flow rate of the substrate treating solution
Data Source
AI summary
There are provided a substrate treating apparatus and method for etch rate deviation improvement. The substrate treating apparatus includes: a treating bath providing space for receiving a substrate treating solution for treating substrates; a treating solution source providing the substrate treating solution into the treating bath such that the substrates are immersed and treated in the substrate treating solution; and a bubble generation module connected to the treating bath and generating bubbles in the substrate treating solution by injecting gas.