Buffer Chamber Electrode for Uniform Plasma Density
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Solution Overview
Problem
Non-uniform plasma density in substrate processing apparatuses leads to unstable supply of active species gases, causing issues with film thickness uniformity and wet etching rates during semiconductor manufacturing.
Innovation Solution
A substrate processing apparatus with a reaction tube, substrate support, and a buffer chamber along the inner wall of the reaction tube, featuring an electrode for plasma generation that applies high-frequency power to activate processing gases, ensuring uniform gas supply to multiple substrates stacked in stages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a buffer chamber is configured for plasma generation, then plasma can be generated to activate processing gases, but a standing wave may be generated making plasma density non-uniform
Solution Approach 1:
The patent introduces a gas supply port positioned at a specific location within the buffer chamber to locally adjust gas distribution. This creates non-uniform gas flow patterns that counteract the standing wave effects, thereby achieving uniform plasma density across the substrate surface while maintaining effective plasma generation for activating processing gases.
2Productivity
If plasma density is non-uniform, then active species gas supply becomes unstable, but this causes problems in film thickness uniformity and wet etching rate
Solution Approach 1:
The gas supply port is strategically positioned to create localized gas injection zones that compensate for standing wave patterns. This ensures uniform distribution of active species gases across different substrate positions, achieving stable film thickness and consistent wet etching rates while maintaining high processing efficiency through effective plasma activation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves improved uniformity in film thickness and stability in plasma density, enhancing the consistency and quality of film formation on substrates.
Implementation Method 1
an electrode for plasma generation that is inserted from a lower portion of the buffer chamber into an upper portion of the buffer chamber through a side surface of the reaction tube, the electrode being configured to activate the processing gas by plasma inside the buffer chamber thereby applying high-frequency power to the electrode by a power supply
Data Source
AI summary
There is provided a technique that includes: a reaction tube configured to process a plurality of substrates; a substrate support configured to support the plurality of substrates stacked in multiple stages; a buffer chamber that is at least located at a position of height from a lowermost substrate to an uppermost substrate supported by the substrate support, and is installed along an inner wall of the reaction tube; and an electrode for plasma generation that is inserted from a lower portion of the buffer chamber into an upper portion of the buffer chamber through a side surface of the reaction tube, the electrode being configured to activate the processing gas by plasma inside the buffer chamber thereby applying high-frequency power to the electrode by a power supply.