Buffer Chamber Pressure and Temperature Control for Stable Process Gas
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Solution Overview
Problem
In substrate processing for semiconductor device manufacturing, adiabatic expansion of process gases in buffer chambers can lead to temperature drops, causing gas liquefaction and particle generation in the process space.
Innovation Solution
The technique involves adjusting the pressure and temperature of the buffer space in the buffer chamber to maintain them within pre-set ranges, thereby preventing gas liquefaction and stabilizing the gas state during substrate processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the buffer chamber space is widened to accommodate gas supply, then the gas flow capacity is improved, but the gas temperature drops due to adiabatic expansion causing liquefaction and particle generation
Solution Approach 1:
The buffer chamber is pre-heated to a temperature higher than the process chamber before gas supply begins. This preliminary heating action ensures that when gas expands into the buffer chamber, the chamber walls already provide thermal energy to prevent adiabatic cooling and liquefaction, thus maintaining gas temperature while accommodating the required gas volume.
Solution Approach 2:
The temperature parameter of the buffer chamber is dynamically adjusted and maintained at a level higher than the process chamber temperature. By changing and controlling this temperature parameter, the system prevents the gas from undergoing adiabatic expansion cooling that would lead to liquefaction, while still allowing sufficient gas quantity to be supplied.
2Stability of the object's composition
If the buffer chamber temperature is increased to prevent gas liquefaction, then the gas state stability is improved, but the risk of thermal decomposition of gases increases
Solution Approach 1:
Temperature sensors monitor the buffer chamber and process chamber temperatures in real-time, providing feedback to the control system. The controller adjusts the buffer chamber heating power based on this feedback to maintain the temperature difference within safe limits, preventing both gas liquefaction and thermal decomposition. This closed-loop control ensures gas state stability while avoiding harmful thermal effects.
Solution Approach 2:
The buffer chamber temperature is controlled to be within a specific range above the process chamber temperature, rather than simply maximizing it. By optimizing this temperature parameter within safe boundaries, the system achieves sufficient thermal energy to prevent adiabatic cooling and liquefaction, while maintaining temperatures low enough to avoid thermal decomposition of the process gases.
3Productivity
If the buffer chamber pressure is adjusted to control gas flow, then the gas supply rate is improved, but the gas temperature changes affecting gas state stability
Solution Approach 1:
The buffer chamber is pre-heated to an elevated temperature before gas supply operations begin. This preliminary thermal preparation ensures that subsequent pressure adjustments for controlling gas supply rate do not result in temperature drops sufficient to cause liquefaction, thereby maintaining gas state stability while enabling flexible productivity control through pressure adjustment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses changes in the gas state, preventing particle generation and ensuring stable substrate processing conditions, which improves process reproducibility and prevents thermal decomposition of gases.
Implementation Method 1
an adiabatic expansion of a gas (such as the process gas supplied through a supply pipe) may occur due to widening of a space in a buffer chamber. In such a case, a temperature of the gas may be lowered.
Data Source
AI summary
According to the present disclosure, it is possible to suppress a change in a state of a gas. There is provided a technique that includes: (a) adjusting at least one selected from the group of a pressure and a temperature of a buffer space in a buffer chamber when the temperature of the buffer space is out of a pre-set temperature range or the pressure of the buffer space is out of a pre-set pressure range; and (b) processing a substrate by supplying a gas via the buffer chamber to a process chamber in which the substrate is processed.