Buffer Chamber Electrode Layout for Uniform Multi-Substrate Plasma
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Solution Overview
Problem
In substrate processing for semiconductor devices, plasma distribution is uneven among multiple substrates due to insufficient supply of active species, leading to variations in processing performance.
Innovation Solution
A substrate processing apparatus with a buffer chamber containing two application electrodes of different lengths and a reference electrode, which generates plasma uniformly across substrates by regulating the lengths of the electrodes to ensure consistent active species supply.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma is confined in a buffer chamber and active species are supplied to multiple substrates via holes, then processing can be performed on multiple substrates simultaneously, but active species are insufficiently supplied to substrates in the vicinity of a large space, leading to variations in processing performance
Solution Approach 1:
The buffer chamber is divided into multiple regions, each with its own plasma generation electrode. This segmentation allows independent control of plasma generation in different spatial zones, ensuring uniform active species distribution across all substrates while maintaining simultaneous processing capability
Solution Approach 2:
Different regions of the buffer chamber are equipped with plasma generation electrodes of different lengths tailored to their specific spatial requirements. Regions with larger spaces have longer electrodes to generate sufficient plasma, while regions with smaller spaces have shorter electrodes, creating locally optimized plasma distribution for uniform processing performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures uniform supply of active species to all substrates, enhancing film thickness uniformity and reducing variations in substrate processing performance.
Implementation Method 1
at least two application electrodes of different lengths to which high frequency electric power is applied
Implementation Method 2
to which high frequency electric power is applied
Data Source
AI summary
There is provided is a technique that includes: a process chamber in which at least one substrate is processed; and at least one buffer chamber in which plasma is formed, wherein the at least one buffer chamber includes at least two application electrodes of different lengths to which high frequency electric power is applied, and a reference electrode subjected to a reference potential.