Semiconductor Package Buffer Chip Stack for Power Load Relief

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Solution Overview

Problem

Existing semiconductor devices face challenges in miniaturization, multifunctionality, and high performance due to increased load on stacked semiconductor chips, limiting design freedom and integration capabilities.

Innovation Solution

A semiconductor device design featuring a lower buffer chip, an upper buffer chip, conductive posts, and a memory chip stack structure, where the upper buffer chip has a larger horizontal area and vertical length than the lower buffer chip, with conductive posts providing power supply and a redistribution structure for electrical connectivity, reducing thermal and electrical loads on memory chips.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If semiconductor chips are stacked to achieve high integration and miniaturization, then integration density and performance are improved, but load on the stacked chips increases

Engineering Contradiction:
Improveintegration densityVSAvoidload on chips
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The buffer chip is divided into multiple layers (first buffer chip layer and second buffer chip layer) with different功能的分配. The first layer handles power supply and signal transmission to memory chips, while the second layer provides additional buffering and signal processing capabilities. This segmentation distributes the functional load across multiple specialized components rather than concentrating it on single chips.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The conductive posts act as intermediary elements between the buffer chips and memory chips, providing dedicated vertical interconnects that reduce the electrical load on horizontal interconnects. The redistribution structure serves as an intermediary that redistributes power and signals across the buffer chip layers, preventing load concentration on any single chip.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Adaptability or versatility

If the horizontal area of buffer chips is increased to reduce load, then design freedom is improved, but chip area and complexity increase

Engineering Contradiction:
Improvedesign freedomVSAvoidchip area
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent transitions from a single-layer horizontal layout to a multi-layer vertical architecture. The buffer chips are stacked in multiple layers with conductive posts providing vertical interconnects, effectively utilizing the third dimension (vertical space) to achieve the connectivity and load distribution that would otherwise require larger horizontal areas. This dimensional transition reduces the footprint while maintaining design flexibility.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The first and second buffer chip layers are nested vertically, with the second layer positioned above the first layer. The conductive posts extend through both layers to connect to memory chips, creating a nested hierarchical structure where smaller functional units are contained within larger integrated assemblies. This nesting achieves high integration without proportionally increasing the overall chip area.

Inventive Principle:
Principle #7Nested doll (Nesting)

Data Source

PatentUS20240065002A1Semiconductor device and semiconductor package comprising the same
Publication Date: 2024.02.22 SAMSUNG ELECTRONICS CO LTD
  • US20240065002A1 patent drawing
  • US20240065002A1 patent drawing
  • US20240065002A1 patent drawing

AI summary

A semiconductor device including a first lower buffer chip, an upper buffer chip disposed on an upper surface of the first lower buffer chip, a plurality of conductive posts spaced apart from the first lower buffer chip and disposed on a lower surface of the upper buffer chip, and a first memory chip stack structure disposed on the upper buffer chip and including a plurality of first memory chips.