Multi-Stage Buffer Circuit for High Slew Rate in Small Area

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Solution Overview

Problem

Conventional buffer circuits with transistors of the same conductivity type face challenges in achieving high slew rate due to limitations in transistor size and gain, which restricts the improvement of voltage slew rate and occupies a larger area.

Innovation Solution

A buffer circuit design incorporating multiple n-channel or p-channel transistors with a capacitor, where the transistors are connected in a specific configuration to enhance driving capability and gain, particularly for high-frequency components, allowing for a simple manufacturing process and reduced area occupancy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If the transistor size is increased to improve gain and slew rate, then the gain and slew rate are improved, but the occupied area increases

Engineering Contradiction:
Improveslew rateVSAvoidoccupied area
Core Design Contradiction:
SpeedVSArea of stationary object

Solution Approach 1:

The buffer circuit is divided into multiple stages (first buffer circuit, second buffer circuit, third buffer circuit) with each stage containing specific transistors that contribute to the overall gain. This segmentation allows the total gain to be distributed across multiple smaller transistors rather than requiring one large transistor, thereby improving slew rate without proportionally increasing the occupied area.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The transistors in the buffer circuit serve multiple functions: they provide gain amplification, contribute to slew rate improvement, and maintain signal buffering. By designing the circuit so that multiple transistors work together to achieve these functions simultaneously, the circuit avoids the need for oversized single transistors that would be required to handle all functions independently.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Power

If the transistor size is increased to improve gain, then the gain is improved, but the occupied area increases

Engineering Contradiction:
ImprovegainVSAvoidoccupied area
Core Design Contradiction:
PowerVSArea of stationary object

Solution Approach 1:

The total gain requirement is segmented across multiple transistors in different buffer stages. The first buffer circuit contains transistors for initial amplification, the second buffer circuit contains transistors for intermediate amplification, and the third buffer circuit contains transistors for final amplification. This distribution of gain across multiple smaller transistors reduces the area occupied compared to using a single large transistor to achieve the same total gain.

Inventive Principle:
Principle #1Segmentation

3Productivity

If transistors of the same conductivity type are used to simplify manufacturing, then productivity is improved, but the slew rate is difficult to improve

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidslew rate
Core Design Contradiction:
ProductivityVSSpeed

Solution Approach 1:

The circuit uses dynamic configuration of n-channel transistors in different positions and roles within the buffer stages. By strategically placing n-channel transistors with different characteristics (different sizes, different positions in the circuit hierarchy) and using them in different functional roles (input stage, intermediate stage, output stage), the circuit achieves high slew rate while maintaining manufacturing simplicity through uniform conductivity type.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS8648849B2Buffer circuit
Publication Date: 2014.02.11 SEMICON ENERGY LAB CO LTD
  • US8648849B2 patent drawing
  • US8648849B2 patent drawing
  • US8648849B2 patent drawing

AI summary

A buffer circuit having high slew rate is provided. The buffer circuit is provided, which includes a plurality of transistors having the same conductivity type and a capacitor and whose gain is determined depending on the gain of all the plurality of transistors. A buffer circuit having high driving capability and high gain of a high-frequency component can be provided. Such a buffer circuit has also high slew rate. The plurality of transistors having the same conductivity type in the buffer circuit may be either p-channel transistors or n-channel transistors.