Semiconductor Buffer Region Doping With Helium Lifetime Control
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Solution Overview
Problem
Current semiconductor devices face challenges in optimizing the doping concentration distribution and lattice defect regions to enhance carrier mobility and reduce leakage current, particularly in the buffer region of semiconductor substrates.
Innovation Solution
The introduction of a first lifetime control region formed by helium ion implantation, which creates a specific doping concentration profile and lattice defect distribution to control carrier lifetime and suppress leakage current, while maintaining efficient switching characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If hydrogen ion implantation is used to form peaks in the buffer region, then doping concentration distribution is improved, but leakage current suppression is insufficient
Solution Approach 1:
The patent changes the ion implantation parameters by using helium ions instead of hydrogen ions, and by controlling the implantation depth and concentration to create a specific lattice defect distribution that effectively suppresses leakage current while maintaining optimal doping concentration distribution
Solution Approach 2:
The patent introduces a first lifetime control region formed by helium ion implantation as an intermediary structure between the drift region and the collector region. This intermediate region with controlled lattice defects acts as a mediator to suppress leakage current without interfering with the doping concentration distribution in the buffer region
2Object-generated harmful factors
If lattice defect regions are increased to suppress leakage current, then leakage current is reduced, but carrier mobility decreases
Solution Approach 1:
The patent applies local quality by creating lattice defects only in specific regions (first lifetime control region and second lifetime control region) where they are needed for leakage current suppression, while maintaining high crystal quality in other regions to preserve carrier mobility. The lattice defect concentration is locally optimized rather than uniformly distributed
Solution Approach 2:
The patent changes the parameter of lattice defect concentration by controlling the helium ion implantation conditions to create an optimal distribution pattern - with higher defect concentration in the lifetime control regions and lower defect concentration in the buffer region, thereby achieving both leakage current suppression and acceptable carrier mobility
3Loss of energy
If turn-off loss is reduced by optimizing switching characteristics, then switching efficiency is improved, but inter-collector-emitter saturation voltage increases
Solution Approach 1:
The patent changes multiple parameters simultaneously - the helium ion implantation concentration, implantation depth, and the doping concentration distribution in the collector region - to achieve an optimal balance where turn-off loss is reduced through improved switching characteristics while the inter-collector-emitter saturation voltage is kept low through proper voltage distribution control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the trade-offs between turn-off loss, inter-collector-emitter saturation voltage, and leakage current, resulting in enhanced semiconductor device performance.
Implementation Method 1
a first lifetime control region formed by helium ion implantation
Data Source
AI summary
Provided is a semiconductor device including a drift region, a buffer region which is provided in a back surface side of a semiconductor substrate relative to the drift region and has a first peak of a doping concentration, and a first lattice defect region which is provided in a front surface side of the semiconductor substrate relative to the first peak in a depth direction of the semiconductor substrate, in which the buffer region has a hydrogen peak which is provided in the front surface side of the semiconductor substrate relative to the first lattice defect region, and an integrated concentration obtained by integrating the doping concentration in a direction from an upper end of the drift region to the hydrogen peak in the depth direction of the semiconductor substrate is equal to or larger than a critical integrated concentration.