Semiconductor Buffer Region Doping via Depth-Specific Hydrogen Implantation
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Solution Overview
Problem
The existing techniques for manufacturing semiconductor apparatuses face complexity and increased costs due to the need to adjust multiple dose amounts of hydrogen ions for various depth positions in the semiconductor substrate, which is challenging because of variations in carbon and oxygen concentrations, leading to complications in achieving the desired carrier concentration distribution for optimal breakdown voltage.
Innovation Solution
The method involves setting a specific dose amount for the deepest peak of hydrogen ions based on the carbon and oxygen concentrations, allowing for adjustment of the integral value of carrier concentration in the buffer region to match the designed distribution, thereby simplifying the manufacturing process and reducing costs by maintaining constant dose amounts for other concentration peaks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple dose amounts of hydrogen ions are adjusted for various depth positions to achieve desired carrier concentration distribution, then manufacturing precision is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent changes the parameter of hydrogen ion dose amount from multiple variable values to a single constant value. By setting a specific constant dose amount that accounts for carbon and oxygen concentration variations in the semiconductor substrate, the method achieves the desired carrier concentration distribution without requiring multiple adjustments at different depth positions, thereby simplifying the manufacturing process while maintaining precision
Solution Approach 2:
The patent extracts the adjustment of dose amount from the manufacturing process. Instead of adjusting multiple dose amounts for various depth positions, the invention removes this complexity by using a single predetermined constant dose amount that inherently accounts for substrate variations, thus eliminating the need for complex multi-parameter adjustments
2Manufacturing precision
If multiple dose amounts of hydrogen ions are adjusted for various depth positions to achieve desired carrier concentration distribution, then manufacturing precision is improved, but manufacturing cost increases
Solution Approach 1:
The patent changes the parameter of hydrogen ion dose amount from multiple variable values to a single constant value. By setting a specific constant dose amount that accounts for carbon and oxygen concentration variations in the semiconductor substrate, the method achieves the desired carrier concentration distribution without requiring multiple adjustments at different depth positions, thereby simplifying the manufacturing process while maintaining precision
Solution Approach 2:
The patent adopts a simpler, more economical approach by using a single constant dose amount instead of multiple adjusted doses. This disposable-like strategy of using one predetermined value eliminates the need for expensive and time-consuming multiple adjustment steps, reducing manufacturing cost while still achieving the required precision through proper selection of the constant dose amount
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise adjustment of carrier concentrations across the buffer region, ensuring the semiconductor apparatus meets performance criteria while simplifying the manufacturing process and reducing costs by minimizing the need for frequent adjustments in the hydrogen ion implantation process.
Implementation Method 1
a technique for implanting a hydrogen ion into a semiconductor substrate, and thereby forming a donor derived from the hydrogen ion
Data Source
AI summary
A manufacturing method of a semiconductor apparatus including: setting, depending on a distribution of the carrier concentrations that the buffer region should have, a dose amount of hydrogen ions to be implanted into a plurality of depth positions corresponding to the plurality of concentration peaks; and implanting, depending on the dose amount that is set in the setting, the hydrogen ions into the semiconductor substrate is provided. In the setting, among the plurality of concentration peaks, the dose amount of the hydrogen ions for a deepest peak farthest from the lower surface of the semiconductor substrate is set depending on a carbon concentration of the semiconductor substrate, and the dose amount for at least one of the concentration peaks other than the deepest peak is set regardless of the carbon concentration of the semiconductor substrate.