Semiconductor Buffer Doping Profile for Short-Circuit Oscillation Suppression
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Solution Overview
Problem
Conventional semiconductor devices with buffer regions as field stops face challenges in suppressing short-circuit oscillations and ensuring latch-up withstand capability due to doping concentration variations and reach-through issues.
Innovation Solution
The semiconductor device employs a buffer region with a specific doping concentration profile, featuring multiple peaks and a flat region, optimized by proton ion implantation and heat treatment to control lattice defects, which reduces doping concentration oscillations and enhances integrated dopant concentration, thereby suppressing short-circuit oscillations and maintaining latch-up capability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a buffer region with conventional doping concentration profile is used, then the device structure is simple, but short-circuit oscillations occur and latch-up withstand capability is insufficient
Solution Approach 1:
The patent applies parameter changes by optimizing the doping concentration profile in the buffer region through controlled proton ion implantation and heat treatment parameters. Specifically, the proton ion implantation dose is set to 1×10^15 to 1×10^16 ions/cm² and the heat treatment temperature is maintained at 800°C to 900°C, which transforms the doping concentration distribution to suppress short-circuit oscillations while preventing latch-up, thereby improving reliability without excessive structural complexity
Solution Approach 2:
The patent implements preliminary action by performing proton ion implantation and heat treatment during the manufacturing process to pre-establish the optimal doping concentration profile in the buffer region before the device is put into operation. This preliminary doping optimization ensures that the buffer region inherently possesses the characteristics needed to suppress oscillations and prevent latch-up, rather than requiring complex post-manufacturing adjustments
2Reliability
If proton ion implantation and heat treatment are applied to optimize doping concentration, then short-circuit oscillations are suppressed, but manufacturing process complexity increases
Solution Approach 1:
The patent resolves the manufacturing complexity issue by precisely defining parameter ranges for proton ion implantation (dose: 1×10^15 to 1×10^16 ions/cm²) and heat treatment (temperature: 800°C to 900°C). By establishing these specific parameter windows, the patent achieves effective suppression of short-circuit oscillations through controlled doping optimization while maintaining compatibility with existing semiconductor manufacturing processes, thus balancing performance improvement with manufacturing feasibility
3Reliability
If doping concentration is increased to prevent reach-through, then latch-up capability is maintained, but short-circuit oscillations are exacerbated
Solution Approach 1:
The patent applies local quality by creating a non-uniform doping concentration distribution within the buffer region through controlled proton ion implantation. The doping concentration varies locally to achieve different functions: higher concentration in certain zones to prevent reach-through and maintain latch-up capability, while lower concentration in other zones to suppress short-circuit oscillations. This spatially differentiated doping profile resolves the contradiction between preventing reach-through and suppressing oscillations
Solution Approach 2:
The patent implements dynamics by transforming the static doping concentration profile into a dynamic one through heat treatment after proton ion implantation. The heat treatment process allows dopant atoms to diffuse and redistribute, creating a time-dependent evolution of the doping concentration distribution. This dynamic adjustment enables the buffer region to adaptively balance between preventing reach-through and suppressing short-circuit oscillations, rather than relying on a fixed high-doping configuration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The optimized doping concentration profile effectively suppresses short-circuit oscillations and improves latch-up withstand capability while maintaining high-speed switching compatibility.
Implementation Method 1
optimized by proton ion implantation and heat treatment to control lattice defects
Implementation Method 2
optimized by proton ion implantation and heat treatment to control lattice defects
Implementation Method 3
optimized by proton ion implantation and heat treatment to control lattice defects, which reduces doping concentration oscillations
Data Source
AI summary
Provided is a semiconductor device comprising: a semiconductor substrate; a plurality of peaks of a doping concentration provided on a back surface of the semiconductor substrate; and a flat part, with a doping concentration more than or equal to 2.5 times a substrate concentration of the semiconductor substrate, provided between the plurality of peaks in a depth direction of the semiconductor substrate, wherein at least one of the plurality of peaks is a first peak provided on a front surface side relative to the flat part, wherein a doping concentration of the first peak is less than or equal to twice the doping concentration of the flat part.