Buffer Region Doping Profile for Short-Circuit Stable Semiconductors
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor devices with buffer regions as field stops face challenges in preventing depletion layer expansion and short-circuit oscillations due to doping concentration variations and reach-through issues, which affect their latch-up withstand capability and switching performance.
Innovation Solution
The semiconductor device incorporates a buffer region with a specific doping concentration profile, featuring multiple peaks and a flat region, optimized by proton ion implantation and heat treatment to control lattice defects, which reduces doping concentration oscillations and enhances the integrated dopant concentration, thereby suppressing short-circuit oscillations and maintaining latch-up withstand capability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a buffer region with conventional doping concentration profile is used, then the field stop function is provided, but doping concentration variations cause depletion layer expansion and short-circuit oscillations
Solution Approach 1:
The patent applies parameter changes by modifying the doping concentration profile in the buffer region through proton ion implantation and heat treatment. This creates a specific profile with multiple peaks and a flat region, transforming the conventional uniform doping profile into a controlled non-uniform profile that suppresses depletion layer expansion while maintaining field stop functionality.
Solution Approach 2:
The patent implements local quality by creating different doping concentration regions within the buffer region. The multi-peak profile with flat regions provides locally optimized doping concentrations at different depths, allowing the buffer region to simultaneously prevent depletion layer expansion in some areas while maintaining field stop capability in others.
2Reliability
If proton ion implantation and heat treatment are applied to create specific doping profile, then short-circuit oscillations are suppressed, but manufacturing process complexity increases
Solution Approach 1:
The patent applies preliminary action by performing proton ion implantation and heat treatment during the manufacturing process to pre-establish the desired doping concentration profile in the buffer region. This preliminary doping profile creation prevents short-circuit oscillations from the outset, eliminating the need for additional corrective measures or complex control systems during device operation.
3Reliability
If doping concentration is increased to prevent reach-through, then latch-up withstand capability is improved, but short-circuit oscillations are exacerbated
Solution Approach 1:
The patent resolves this contradiction through parameter changes by creating a non-uniform doping concentration profile with multiple peaks and flat regions. This profile allows higher doping concentrations in specific regions to prevent reach-through and improve latch-up withstand capability, while maintaining lower doping concentrations in other regions to suppress short-circuit oscillations, thus optimizing both competing requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses short-circuit oscillations and maintains high latch-up withstand capability while enabling high-speed switching by controlling doping concentration variations and maintaining a stable electric field, improving the overall performance of the semiconductor device.
Implementation Method 1
optimized by proton ion implantation and heat treatment to control lattice defects
Implementation Method 2
optimized by proton ion implantation and heat treatment to control lattice defects
Implementation Method 3
optimized by proton ion implantation and heat treatment to control lattice defects
Data Source
AI summary
Provided is a semiconductor device comprising: a semiconductor substrate; a plurality of peaks of a doping concentration provided on a back surface of the semiconductor substrate; and a flat part, with a doping concentration more than or equal to 2.5 times a substrate concentration of the semiconductor substrate, provided between the plurality of peaks in a depth direction of the semiconductor substrate, wherein at least one of the plurality of peaks is a first peak provided on a front surface side relative to the flat part, wherein a doping concentration of the first peak is less than or equal to twice the doping concentration of the flat part.